K 3505 TRANSISTOR Search Results

bpw 81 t

Abstract: SFH213 sfh 206 BP 104 FAS
Contextual Info: S i -F o t o d e t e k t o r e n S il ic o n P h o t o d e t e c t o r s T y p e n ü b e r s ic h t S ummary 1. 1. Foto IC für Fernsteuerung SFH 5110 2. SFH 5410 Fotodetektoren in SM T T ypes Photo IC for Remote Control SFH 5111 2. 2.1.SM T-Transistoren

ATC100B101FT500XT

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S38075HR3 MRF7S38075HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38075H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38075HR3 MRF7S38075HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S38075H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38075HR3 MRF7S38075HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to

bpw 104

Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
Contextual Info: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT

2N918

Abstract: 2N4033
Contextual Info: continued >cc <—1 oa. w0 JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > CU E A3 UoJ > X U_a. X <o E no o0 (continued) o0 ID CM II @ 5 I - PACKAG E TYPE General purpose amplifiers and switches f T min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300

2N3930

Abstract: 2N4033
Contextual Info: continued >cc <—1 oa . w JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > X CU E A3 UJ o > U_ a. X <o E o n o0 (continued) o0 ID CM II I@ 5 PACKAGE TYPE General purpose amplifiers and switches fT min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300

KEP62

Abstract: Variable Resistor 3305
Contextual Info: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

KEP62

Abstract: MC100 MC100EP16VS MC100EP16VSD Variable Resistor 3305
Contextual Info: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

Contextual Info: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

2N3503

Abstract: 2N3504a 2n3504 0732N
Contextual Info: TYPES 2N3502 THRU 2N3505 P-N-P SILICON TRANSISTORS B U L L E T IN N O . DL-S 6 6 8 2 7 8 , M A R C H 1966 FULLY CHARACTERIZED FOR HIGH-SPEED, LOW-NOISE, MEDIUM-POWER SWITCHING AND GENERAL-PURPOSE AMPLIFIER APPLICATIONS • hF[ Guaranteed from 10 ¿¿A to 500 mA

KEP62

Abstract: KP62 MC100 MC100EP16VS MC100EP16VSD
Contextual Info: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

KEP62

Abstract: MC100 MC100EP16VS MC100EP16VSD Variable Resistor 3305
Contextual Info: MC100EP16VS 3.3V / 5VĄECL Differential Receiver/Driver with Variable Output Swing The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

S7190A

Abstract: SI 3205
Contextual Info: S-7190A 64-bit THERMAL HEAD DRIVER The S-7190A is a thermal print head driver, consisting of a CMOS 64-bit shift reg iste r with s e ria l input and serial/parallel output, a C M O S 64-bit latch and 64 Nch opendrain drivers. It directly drives a thin film or a thick

Contextual Info: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

DFN8

Abstract: KEP62 MC100EP16VS 2105 SOIC8
Contextual Info: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

J 3305

Abstract: KEP62 MC100EP16VS
Contextual Info: MC100EP16VS 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing Description The MC100EP16VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 100EP16 with an input pin that controls the amplitude of the outputs.

2N6782

Abstract: 2n6800 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

Contextual Info: • • • • • Precision engineered, “closed entry” contacts Space saving design for high density packaging Micro jacks are available for mating with .015 to .082 diameter pins and leads Beryllium Copper multi-spring contact maintains retention after multiple insertions

2520P

Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
Contextual Info: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant

fototransistor BPW 39

Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.

Contextual Info: M M O T O R O L A - Pulse W idth Modulation Control C ircuit The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. Functions included in this 1C are a temperature compensated voltage

N493

Abstract: basf 100cjd
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)

SG3526

Abstract: tzn 7 sg3526 pwm power supply sg3526 power supply 12v dc power supply with sg3526 application note sg3526 sg3526 dc dc applications SG3526N SG3S26 sg3s
Contextual Info: M M O TO R O LA — — Pulse W id th M o d u latio n C ontrol C irc u it The SG3526 is a high performance pulse width modulator integrated circuit intended for fixed frequency switching regulators and other power control applications. _ _ Functions included in this 1C are a temperature compensated voltage

HA2-5195-5

Abstract: HA2-5190-2 5195-5 HA5190-2
Contextual Info: h a r r is S E M I C O N D U C T O R HA-5190,J HA-5195 " 150MHz, Fast Settling Operational Amplifiers N o vem b er 1996 Description Features • Fast Settling Time 0 .1 % . • Very High Slew R a te . 200V/ns