BUX47SMD
Abstract: No abstract text available
Text: BUX47SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX47SMD
O276AB)
15-Aug-02
BUX47SMD
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Untitled
Abstract: No abstract text available
Text: BUX47 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47
O204AA)
18-Jun-02
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c 5516
Abstract: bux47 application BUX47 transistor IC 12A 400v NPN Transistor 15A 400V to3
Text: BUX47 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • Hermetic Package 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
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BUX47
BUX47
204AA
c 5516
bux47 application
transistor IC 12A 400v
NPN Transistor 15A 400V to3
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BUX47
Abstract: 7333 A
Text: BUX47 Power Transistor NPN Silicon Power Transistors are designed for use in high-speed switching and linear amplifier applications. Features: • High Current Capabilities. • Fast Turn-On and Turn Off. • Power Dissipation -PD = 125W at TC = 25°C. • DC Current Gain
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BUX47
BUX47
7333 A
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high voltage fast switching npn transistor
Abstract: NPN Transistor 450v 1A BUX47A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX47A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min) ·Fast Switching Speed APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25℃)
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BUX47A
high voltage fast switching npn transistor
NPN Transistor 450v 1A
BUX47A
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Untitled
Abstract: No abstract text available
Text: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUX47A Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEoisusr 450V (Min) • Fast Switching Speed APPLICATIONS
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BUX47A
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Untitled
Abstract: No abstract text available
Text: BUX47A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47A
O204AA)
18-Jun-02
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Untitled
Abstract: No abstract text available
Text: BUX47 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: BUX47 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47
O204AA)
31-Jul-02
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BUX47A
Abstract: No abstract text available
Text: BUX47A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47A
O204AA)
31-Jul-02
BUX47A
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BUX47A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BUX47A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter
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BUX47A
BUX47A
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Untitled
Abstract: No abstract text available
Text: BUX47A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUX47A
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: BUX47 MECHANICAL DATA Dimensions in mm NPN SILICON POWER TRANSISTOR 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • Hermetic Package 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)
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BUX47
BUX47
204AA
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BUX47
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BUX47 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Intended for high voltage,fast switching applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter
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BUX47
BUX47
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BUV47
Abstract: BUV47FI P421 equivalent buv47a Diode jx4 BUX47 BUX47A bux4 TO218 BUV47AF
Text: • o o s a g a i SCS -THOMSON S G S-THOMSON □ ■ T 3 3 - I 3 _ BUX47/V47/V47FI BUX47A/V47A/47AFI 3DE D HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon muitiepitaxiai mesa NPN transistors mounted res
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BUX47/V47/V47FI
UX47A/V47
BUX47/A,
BUV47/A,
BUV47FI/AFI
O-218
ISOWATT218
BUX47
BUV47
BUV47FI
P421 equivalent
buv47a
Diode jx4
BUX47A
bux4
TO218
BUV47AF
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Untitled
Abstract: No abstract text available
Text: N AMPR PHILIPS/DISCRETE 2SE D • bbSB'IBl D Q n Q S 3 b ■ BUX47 BUX47A A T - 3 3 -/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUX47
BUX47A
b53T31
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TO3 package RthJC
Abstract: No abstract text available
Text: / = 7 ^ 7# S G S -T H O M S O N [* ^ ô m [iO T « S B U X 4 7 /V 4 7 /V 4 7 FI B U X 4 7 A /V 4 7 A /4 7 A F I HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon multiepitaxial mesa NPN transistors mounted res
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BUX47/A,
BUV47/A,
BUV47FI/AFI
O-218
ISOWATT218
BUX47
BUV47
UV47FI
UX47A
UV47A
TO3 package RthJC
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BUX47
Abstract: equivalent of SL 100 NPN Transistor transistor P421 V47A p421 bl cj BUV47 BUV47AF1 P421 BUV47A BUV47FI
Text: • o o a a ^ a i SGS-THOMSON S G S - TH OM SON □ ■ H ^ 3 3 - i 3 _ BUX47/V47/V47FI BUX47A/V47A/47AFI 3GE D HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon multiepitaxial mesa NPN transistors mounted res
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BUX47/V47/V47FI
BUX47A/V47A/47AFI
BUX47/A,
BUV47/A,
BUV47FI/AFI
O-218
ISOWATT218
BUX47
BUV47
BUV47FI
equivalent of SL 100 NPN Transistor
transistor P421
V47A
p421 bl cj
BUV47AF1
P421
BUV47A
BUV47FI
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BUX69
Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Text: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53
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BUX23
BUX24
BUX25
BUX26
BUX27
BUX28
300min
BUX29
100min
BUX34
BUX69
BUX37
BUX55
BUX80
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N493
Abstract: basf 100cjd
Text: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)
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BUX47
BUX47A
N493
basf
100cjd
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BUX47A
Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current
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tbl75b
BUX47,
BUX47A,
BUX47B
bux47a
1ux47b
BUX47
t-35-/s
BUX47A
BY205-400
silicon power transistors
T35 ET
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FZH 111
Abstract: fzh 101 BUX47 BUX47A
Text: I J ESE D N AMER P H I L I P S / D I S C R E T E • ^ 5 3 1 3 1 OaiTG53 h ■ BUX47 BUX47A T~- 3 3 - I S SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T O -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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OaiTG53
BUX47
BUX47A
FZH 111
fzh 101
BUX47A
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npn 100w
Abstract: BUW41 BUW41A BUX31B THOMSON DISTRIBUTOR 58e d 2N6542 2N6544 2N6671 2N6672 2N6673
Text: TH OM SO N/ D I S T R I B U T O R SflE D Bipolar Power Transistors High-Voltage • []0[1573D SOI ■ V c E s a t -V 250 300 300 300 3 25 3 50 400 4 00 4 00 300 □ 65 0 65 0 45 0 4 00 □ 550 650 450□ 450 □ 2 N 6 6 7 8 S w itch M a x FAM ILY (n -p -n )
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J0ata73
2N6673
BUX42
2N6542
2N6544
2N6671â
BUX43
T0204AA/
2N6672Â
2N6673"
npn 100w
BUW41
BUW41A
BUX31B
THOMSON DISTRIBUTOR 58e d
2N6671
2N6672
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Untitled
Abstract: No abstract text available
Text: 7^2^237 QOSTHCn T • S G S -T H O M S O N KLUOTT^OlDOi S G S-TH0MSÔN 3 3 “ l> 2N6544 2N6545 _ 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case. They are intended for high voltage, fast switching applica
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2N6544
2N6545
2N6544
2N6545
2N6544-2N6545
300jis,
BUX47
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