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    K 2506 Search Results

    K 2506 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LPO2506I-103LB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 3631, CHIP, 3631, ROHS COMPLIANT Visit Coilcraft Inc
    LPO2506I-223LB Coilcraft Inc General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 3631, CHIP, 3631, ROHS COMPLIANT Visit Coilcraft Inc
    LPO2506I-473LB Coilcraft Inc General Purpose Inductor, 47uH, 20%, 1 Element, Ferrite-Core, SMD, 3631, CHIP, 3631, ROHS COMPLIANT Visit Coilcraft Inc
    LPO2506I-822LB Coilcraft Inc General Purpose Inductor, 8.2uH, 20%, 1 Element, Ferrite-Core, SMD, 3631, CHIP, 3631, ROHS COMPLIANT Visit Coilcraft Inc
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    K 2506 Price and Stock

    YAGEO Corporation BK250-600-SZ

    PTC RESET FUSE 250V 600MA RAD
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    DigiKey BK250-600-SZ Bag 214 1
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    Avnet Americas BK250-600-SZ Bulk 14 Weeks 5,000
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    Newark BK250-600-SZ Bulk 76 10
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    Avnet Abacus BK250-600-SZ 23 Weeks 5,000
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    Silicon Laboratories Inc PG28-PK2506A

    PG28 EFM32 PRO KIT
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    DigiKey PG28-PK2506A Box 21 1
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    Mouser Electronics PG28-PK2506A 33
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    Newark PG28-PK2506A Bulk 35 1
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    GLYN GmbH & Co. KG PG28-PK2506A 3
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    Symmetry Electronics PG28-PK2506A 1
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    Grayhill Inc 63K25-060

    ROTARY ENCODER OPTICAL 100PPR
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    3M Interconnect M7PSK-2506R

    D-SUB CABLE MMM25K/MC26M/MFM25K
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    DigiKey M7PSK-2506R Bulk 1
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    3M Interconnect M7VWK-2506J

    D-SUB CABLE MMU25K/MC26G/MFU25K
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    DigiKey M7VWK-2506J Bulk 1
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    K 2506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33


    Original
    PDF CY7C1011DV33 CY7C1011DV33 CY7C1011CV33 44-pin 48-ball

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33


    Original
    PDF CY7C1011DV33 CY7C1011DV33 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33


    Original
    PDF CY7C1011DV33 CY7C1011DV33 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Functional Description Features The CY7C1011DV33[1] is a high-performance CMOS Static RAM organized as 128 K words by 16 bits. • Pin-and function-compatible with CY7C1011CV33


    Original
    PDF CY7C1011DV33 CY7C1011DV33 CY7C1011CV33 44-pin 48-ball

    z44n

    Abstract: Burndy y34 lug specifications YRB39U34TW STR W 6750 f BAT35 J1592 RDM6-28 Burndy Y34A service STR W 6750 RDM-28
    Text: BURNDY Underground PRODUCTS FOR UNDERGROUND NETWORK AND RESIDENTIAL DISTRIBUTION SYSTEMS TABLE OF CONTENTS UNDERGROUND NETWORK DISTRIBUTION PRODUCTS UNDERGROUND RESIDENTIAL DISTRIBUTION PRODUCTS Technical Data “Underground Systems Connection and Protection” . . . . . . . . . K-3 - K-4


    Original
    PDF RDMD-28G, RDMD-2858D, RDMD-28CR, RDM-28 RDM-28T BPD-4-350 BPD-6-350 BPD-8-350 BPD-4-500 BPD-6-500 z44n Burndy y34 lug specifications YRB39U34TW STR W 6750 f BAT35 J1592 RDM6-28 Burndy Y34A service STR W 6750 RDM-28

    rs 5493 data sheet

    Abstract: transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


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    PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. rs 5493 data sheet transistor d 5702 e d 5703 T242D336K050 T222B105K075 T111C2 2748 marking 3021 std 5252 f 0917 CV 7311 CSR 6026

    5252 F 0911

    Abstract: CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


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    PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 CSR 6026 s0112 military capacitor kemet t140 d 2060 M39003/10-3078S T110A104K075AS 5252 f 0916 on 5295 transistor

    5252 F 0918

    Abstract: 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


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    PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS C-0100. 5252 F 0918 5252 F 0911 CSR 6026 CSR09 2401 7318 5252 F 1003 7135 35v U 4076 CSR13 MIL-PRF-39003

    5252 F 0911

    Abstract: M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917
    Text: TANTALUM HERMETICALLY SEALED / AXIAL — MIL-PRF-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original
    PDF MIL-PRF-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 M39003/10 5252 F 0910 CSR 6026 0741 8129 3139 147 1330 5252 0916 2322 7346 1006 4213 A 5252 f 0917

    5252 F 0911

    Abstract: 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003
    Text: KEMET TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE* CSR XX B 565 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A — Not Applicable B — 0.1%/k hrs.


    Original
    PDF MIL-C-39003 T256B565K050BS T256B685K050BS T256C226K050BS T256C276K050BS T256D336K050BS T256D396K050BS T216/T256 C-0100. 5252 F 0911 5252 F 0921 5252 F 1104 CSR 6026 T213D CV 7311 0782 K 2564 TYPE CSR13 5252 F 1002 5252 F 1003

    CY7C1012DV33-10BGXI

    Abstract: SRAM TTL
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately


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    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23. CY7C1012DV33-10BGXI SRAM TTL

    5252 F 0911

    Abstract: 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor
    Text: K E M E T TANTALUM HERMETICALLY SEALED / AXIAL — MIL-C-39003 ORDERING INFORMATION OBSOLETE * C S R X X B 5 6 5 K M TYPE FAILURE RATE LEVEL IN % PER 1000 HOURS Capacitors, Fixed, Solid Electrolyte, Tantalum Established Reliability GRADED A— Not Applicable


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    PDF MIL-C-39003 Symbol185K035BS T256B825K035BS T256B106K035BS T256C336K035BS T256C396K035BS T256C476K035BS T256D566K035BS T256D686K035BS T256A125K050BS 5252 F 0911 5252 f 0917 KEMET T110 SERIES kem 5361 5252 F 0918 5252 F 0921 CSR 6026 5252 F 0910 5252 F 1004 2842 dc motor

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16â I/O23.

    Untitled

    Abstract: No abstract text available
    Text: 2 3 4 5 Y A 6 7 96 S i g n a l K o n t a k t e 96 signal contacts Kontaktanordnung Contact arrangement 13 11 17 21 19 15 25 23 29 27 l 31 h = K o n t a k t p o s i t i on b e l e g t = position with contact 2:1 _a 10,5 — c □ = K o n t a k t p o s i t ion n i c h t b e l e g t


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    PDF D-32339

    9904301004

    Abstract: 99-0437-14-05 99-0429-14-04 044-1125-A1 99-1430-814-04 9904300004 99-1429-812-04 99-1437-814-05 09-0431-76-04 99-0429-12-04
    Text: 713 binder ^ S T E C K V E R B I N D E R U TI Sensor Steckverbinder Serie 713 M12xl Kurzinformation Sensor connectors series 713 (M l2x1) Briefinformation K a b e ls te c k ve rb in d e r • • • • 702 709 Schirm bar/nicht schirmbar Konfektionierbar


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    PDF M12xl) damped360 9904301004 99-0437-14-05 99-0429-14-04 044-1125-A1 99-1430-814-04 9904300004 99-1429-812-04 99-1437-814-05 09-0431-76-04 99-0429-12-04

    Untitled

    Abstract: No abstract text available
    Text: 3 Y Kontaktanordnung A Contact 96 S i g n a l K o n t a k t e arrangement 96 s i g n a l 13 17 21 25 z contacts 29 2:1 h = K o n t a k t p o s i t i on b e l e g t = position wi t h c o n t a c t 1 0 , 5 ± 0,1 □ = Kontaktposition nicht belegt = x il without


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    PDF D-B23B9

    Untitled

    Abstract: No abstract text available
    Text: Ko nt ak t ano r d nu ng Con t ac t arrangement 96 S i g n a l Ko n t a k t e 96 s i g n a l c o n t a c t s 5 9 7 13 11 17 15 21 19 25 23 29 27 31 Z H = K o n ta k tp o s itio n belegt = p o s i t i o n with contact 2: 1 10.5 ±0,1 □ = K o n t a k t p o s i t i on ni cht b e l e g t


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    PDF

    09 73 296 6801

    Abstract: federleiste
    Text: Y Kontaktanordnung C o n t a c t arrangeme nt 13 17 21 96 S i g n a l K o n t a k t e 96 s i g n a l c o n t a c t s 25 z 29 2:1 bi = K o n t a k t p o s i t i on b e l e g t = p o s i t i o n wi th c o n t a c t 1 0 , 5 ±0 , 1 8,5 □ = Kontaktposition nicht belegt


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    PDF 76/Ltm 30/iin) 50/iin) D-32339 09 73 296 6801 federleiste

    Untitled

    Abstract: No abstract text available
    Text: Ko nt ak t ano r d nu ng Con t ac t arrangement 5 9 7 13 11 17 15 21 19 96 S i g n a l Ko nt ak t e 96 s i g n a l c o n t a c t s 25 23 Z 2: 1 29 27 31 is = K o n t a k t p o s i t ion b e l e g t = p o s i t i o n with contact 10.5+0.1 □ = K o n ta k tp o s itio n nic ht belegt


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    PDF

    ta 8268 ah

    Abstract: No abstract text available
    Text: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:


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    PDF CSR13 MIL-C-39003/01) non-con68 CSR13J394K* CSR13J474K* CSR13J474M* CSR13J564K* CSR13J684K* CSR13J684M* CSR13J824K* ta 8268 ah

    rcl 3702

    Abstract: ICL 3057 C0M30 km 3702 TRW 3894 IR LFN NJU6576 NJU6576CH 50umX 101x34
    Text: NJU6576 3 4 3 Ï > X 1 0 1 fc ? y • tt h t t î * h T ' ^ ^ L C D K UH * NJU6576 H W W W Ì K r t & m ' m ì t e t ' l i w 7 * f / ^ m LCD h* 5<rt* T?, 3, 434t' 7h Ö * « f -WAM. CPUW-7i-fX@», 3î>/W «4 *K*in* *T? #*/¡es¡h.£-f. iw x*m -7i« b iiii= t.cp u * t. ä e>*x


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    PDF NJU6576 NJU6576l* NJU6576CH C0M33 17U-J -c0m16 NJU6576 NJU657fl rcl 3702 ICL 3057 C0M30 km 3702 TRW 3894 IR LFN NJU6576CH 50umX 101x34

    LT3973-3.3

    Abstract: L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3
    Text: m o le x £ros$ p eference Numbers Old P a r t i Hew Part i O U P a rti New Part i Old Part # New Part i Old P a r t i 07262M 07 84581-0001 0 93 5 6 K 0 7 8 45 6 6 -5 03 5 0 94 6 2 K 0 7 84566-5041 09566M 07 8 4 5 6 6 -0 0 6 5 07264M 07 8 4 5 8 1 -0 00 0 0 93 5 7 K 0 7


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    PDF 07262M 09356K07 09462K07 09566M 07264M 09357K07 09462M 09567K07 07362M 09358K07 LT3973-3.3 L1117T-3.3 LI-CAM-IMX136-1.8 SFH7781-1/2/3 LM3670MFX-0.8 LT3971-3.3 LT1432-3.3

    74LS04 NOT gate

    Abstract: TTL 74LS04 74LS04 fdk vco 74L504 74LS04 ttl 74ls04 dip IC 74LS04 74LS04 voltage supply ic 74LS04 ttl
    Text: F D K AMERICA INC 14E D • 343Ö0Ö4 OGGIGET S ■ DELAY LINE MODULES _ ^ 7-13 conform ity with the M l L-ST D -2 0 2E , the modules ensure a high level of reliability. Active delay line modules containing TTL logic elements are also available, and F D K designs and supplies a wide


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    PDF MIL-STD-202E, 100ns. 200C62ES 250C62ES 500C62ES 750C62ES 101C62ES 15K62ES 201C62ES 25K62ES 74LS04 NOT gate TTL 74LS04 74LS04 fdk vco 74L504 74LS04 ttl 74ls04 dip IC 74LS04 74LS04 voltage supply ic 74LS04 ttl

    VUO 36-16N08

    Abstract: 62-16N07 160-16N07 190-14N07 190-08N07 B6U 380 120-16N01 120-12N01 vuo 125 8216
    Text: 3 Rectifier Bridges, B6U ~ □ Type ^ Ih J l New VUO VUO VUO VUO VUO A 16-08N01 16-12N01 16-14N01 16-16N01 16-18N01 800 1200 1400 1600 1800 250 400 440 500 575 °C 45°C 10 ms A 100 15 °C 0.8 50 per Chip K/W K/W 130 Package style JhJH per Chip Outline drawings


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    PDF 16-08N01 16-12N01 16-14N01 16-16N01 16-18N01 22-08N01 22-12N01 22-14N01 22-16N01 22-18N01 VUO 36-16N08 62-16N07 160-16N07 190-14N07 190-08N07 B6U 380 120-16N01 120-12N01 vuo 125 8216