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Infineon Technologies AG CY7C1012DV33-10BGXIT IC SRAM 12MBIT PARALLEL 119PBGA
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CY7C1012DV33 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CY7C1012DV33		Cypress Semiconductor	12-Mbit (512K x 24) Static RAM		Original	PDF
CY7C1012DV33-10BGXI		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 12MBIT 10NS 119BGA		Original	PDF
CY7C1012DV33-10BGXIT		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 12MBIT 10NS 119BGA		Original	PDF
CY7C1012DV33-8BGXC		Cypress Semiconductor	12-Mbit (512K x 24) Static RAM		Original	PDF

CY7C1012DV33 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).	Original	CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16â I/O23.	PDF
CY7C1012DV33 Contextual Info: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention	Original	CY7C1012DV33 12-Mbit 119-Ball CY7C1012DV33	PDF
CY7C1012DV33-10BGXI Abstract: SRAM TTL Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately	Original	CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23. CY7C1012DV33-10BGXI SRAM TTL	PDF
Contextual Info: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write	Original	CY7C1012DV33 12-Mbit 119-ball	PDF
CY7C1012DV33 Contextual Info: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write	Original	CY7C1012DV33 12-Mbit 119-ball CY7C1012DV33	PDF
CY7C1012DV33 Contextual Info: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately	Original	CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23.	PDF
CY7C1012DV33 Contextual Info: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write	Original	CY7C1012DV33 12-Mbit CY7C1012DV33	PDF
Contextual Info: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).	Original	CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23.	PDF
Contextual Info: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention	Original	CY7C1012DV33 12-Mbit CY7C1012DV33	PDF