K 193 TRANSISTOR Search Results

Contextual Info: R1 2 1 3 K SERI ES PWM STEP-UP DC/DC CONVERTERS NO.EA-193-111020 OUTLINE R1213K Series are CMOS-based, PWM control low consumption current step-up DC/DC converter ICs. A low ripple high efficiency step up DC/DC converter can be composed of R1213K with only an inductor, a diode, divider

NR SOT-143

Abstract: ta 8742 IC Q62702-F1282
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

RCs INFINEON SOT-143

Abstract: VPS05178 145-V10
Contextual Info: BFP 193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Transistor BFR 38

Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Contextual Info: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor marking zg

Abstract: sot-23 Transistor MARKING CODE ZG
Contextual Info: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Transistor BFR 38

Contextual Info: BFR 193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

marking BFG

Abstract: BFG193 VPS05163
Contextual Info: BFG 193 NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFG193

Abstract: Q62702-F1291 gma marking
Contextual Info: BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor bf 193

Abstract: Siemens ESP 100
Contextual Info: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: BFQ 193 NPN Silicon RF Transistor 1
For low noise, high-gain amplifiers up to 2 GHz 2
For linear broadband amplifiers 3
fT = 7.5 GHz F = 1.3 dB at 900 MHz 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

P346A

Abstract: ME8003 ME6002 ME9001 ME9002 BC117 bc142 BSX19 BSX20 BSY95A
Contextual Info: M icro- Electronics Sem iconductors N PN Transistors NPN Switching Transistors m in h FE m ax @ lc mA < < o < < Code V cao V o REFERENCE T A B L E sat ton ns ma to f. ns f T MHz S to c k No. O u tlin e D r a w in g No. BSX19 40 15 20 60 10 0.25 10 7 15 400

Contextual Info: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II

Q62702-F1312

Abstract: marking 93, sot-89 K 193 transistor BFQ193
Contextual Info: BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

bfr 135

Abstract: BFR 30 transistor BFR 80
Contextual Info: BFR 193 L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz XY
For linear broadband amplifiers
fT = 8 GHz 3 F = 1.3 dB at 900 MHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 1296

Abstract: K 193 transistor sot marking code ZS BFQ193
Contextual Info: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

012n3

Contextual Info: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

K 193 transistor

Abstract: ZG 1056
Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900M Hz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFG193 1= E Q62702-F1291

ac 0624 transistor 17-33

Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Contextual Info: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

lge 673

Abstract: TRANSISTOR cq 802
Contextual Info: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!

CD 1691 CB

Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
Contextual Info: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking

ic 006

Abstract: SD8250 F B J22
Contextual Info: SD8250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N B E C G F I Q M A XIM U M M IN IM U M D IM in ch e s / m m in ch e s / m m .140 / 3.56 A .110 / 2.80 B .110 / 2.80 .395 / 10.03 .407 / 10.34 .193 / 4.90 E MAXIMUM RATINGS .230 / 5.84

ac 0624 transistor 17-33

Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Contextual Info: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!