K 1241 TRANSISTOR Search Results

a1241

Abstract: k 1241 transistor SA1241
Contextual Info: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage

Contextual Info: 19- 1155; Rev 1; 9/97 +2.7V, Low -Pow er, 12-B it S e ria l ADCs In 8-Pin SO Power consum ption is only 37mW Vd d = 3V at the 73ksps maximum sam pling speed. A 2 mA shutdown mode reduces power at slower throughput rates. The MAX1240 has an interna! 2.5V reference, while the

Contextual Info: SIEMENS BF 660W PNP Silicon RF Transistor ’ For VHF oscillator applications Type Marking BF 660W LEs Ordering Code Pin Configuration Q62702-F1568 1=B Package 2= E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Values '/CEO 30 Collector-base voltage

2SD1340P

Abstract: 2SD1340
Contextual Info: 2 S D 1340P No.1241 SANYO NPN Triple Diffused Planar Type Silicon Transistor For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. Absolute Maximum Ratings at T a = 2 5 ° C

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

CM 1241 siemens

Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Contextual Info: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz

BD645

Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

B0643

Abstract: d 17275 BD649C
Contextual Info: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts

Contextual Info: 19-1155: RevO. 11/96 +2.7V, Low -Pow er, 12-Bit S e ria l A D C Features +2.7V to +5.25V Single Supply 12-Blt Resolution Small Footprint: 8-Pin DIP and SO Packages Low Power: 3mW 73ksps 66iiW (1ksps) 3pW (power-down mode) Internal Track/Hold, 73ksps Sampling Rate

Contextual Info: Data Sheet November 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, a n d T M IA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ­ ential transceiver circuits that transmit and receive

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

Contextual Info: SOLID STATE IGBT GATE DRIVER MODULE TF1206 Unit m TOSHIBA TF1206 is the IGBT gate driver de­ 41 .5 MAX signed for use with TOSHIBA Insulated Gate mm 9 MAX Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Y Using this driver, you can design

Contextual Info: Preliminary Data Sheet + March 1997 microelectronics ~ ~ group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Data Sheet July 1998 group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A, TL1A, and TM1A Features Description Driver Features T h e T K IA , TL1A, and TM1A devices are dual differ­ ential transceiver circuits that transmit and receive

BPNPA16P

Contextual Info: Data Sheet November 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations Quad Differential Drivers BDG1A, BDP1 A, BDGLA, BPNGA, BPNPA, and BPPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Data Shoot November 1998 ¡Tiícroslsctronícs Group Lucent Technologies Bell Labs Innovations Quad Differential Drivers BDG1A, BDP1 A, BDGLA, BPNGA, BPNPA, and BPPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,

Contextual Info: Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, an d T M IA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ­ ential transceiver circuits that transmit and receive

transistor b 1238

Abstract: fld pcb
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has

transistor Z8W

Abstract: s parameters 4ghz 2SC1241 J260 The Transistor Manual 2sa The Transistor Manual 2sa 15 2SA703 "z5w" z8w TRANSISTOR
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

RJ23N3AA0PT

Abstract: 623H RJ23N3
Contextual Info: BACK RJ23N3AA0PT 1/2.7-type Interline Color CCD Area Sensor with 2 140 k Pixels RJ23N3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ23N3AA0PT is a 1/2.7-type (6.65 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

Contextual Info: Data Sheet November 1997 mi cr oel ect roni cs group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, andTMIA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ­ ential transceiver circuits that transmit and receive

Contextual Info: >kiyixi>ki 19-1155; Rev 2 ; 11/98 EV M .U M '°N *aT +2. 7V, L o w - P o w er, 12 - B i t S e r i a l A D C s in 8 - Pi n SO Power consum ption is only 37m W V d d = 3V at the 7 3ksps m axim um sam pling sp e e d . A 2pA shutdow n mode reduces power at slower throughput rates.

2SA1241

Abstract: 2SC3076
Contextual Info: T O S H IB A 2SC3076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Collector Saturation V oltage : V CE (sat) = 0.5 V (Max.) (IC = 1 A) E xcellen t Sw itching Tim e : tgtg = 1.0