RJ23N3AA0PT
Abstract: 623H RJ23N3
Text: BACK RJ23N3AA0PT 1/2.7-type Interline Color CCD Area Sensor with 2 140 k Pixels RJ23N3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ23N3AA0PT is a 1/2.7-type (6.65 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With
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RJ23N3AA0PT
16-pin
P-DIP016-0500C)
RJ23N3AA0PT
623H
RJ23N3
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a1241
Abstract: k 1241 transistor SA1241
Text: KSC3076 NPN EPITAXIAL SILICO N TRANSISTOR POW ER AM PLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to K S A 1241 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage Symbol VcBO 50 V Collector Emitter Voltage
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KSC3076
a1241
k 1241 transistor
SA1241
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Untitled
Abstract: No abstract text available
Text: 19- 1155; Rev 1; 9/97 +2.7V, Low -Pow er, 12-B it S e ria l ADCs In 8-Pin SO Power consum ption is only 37mW Vd d = 3V at the 73ksps maximum sam pling speed. A 2 mA shutdown mode reduces power at slower throughput rates. The MAX1240 has an interna! 2.5V reference, while the
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MAX1240/MAX1241
10-bit
AX1240
73ksps
MAX1240
-403C
-55aC
MIL-STDS83.
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 660W PNP Silicon RF Transistor ’ For VHF oscillator applications Type Marking BF 660W LEs Ordering Code Pin Configuration Q62702-F1568 1=B Package 2= E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Values '/CEO 30 Collector-base voltage
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Q62702-F1568
OT-323
S35bGS
0235hD5
235b0Â
100MHz
6235bG5
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2SD1340P
Abstract: 2SD1340
Text: 2 S D 1340P No.1241 SANYO NPN Triple Diffused Planar Type Silicon Transistor For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. Absolute Maximum Ratings at T a = 2 5 ° C
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2SD1340P
VfcC-200V
1203KI
2SD1340P
2SD1340
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BD649
Abstract: BD647 TL 2262 BD64S 00m0
Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers
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BD643,
BD645,
BD647,
BD649
TQ-220AB
BD649
BD647
TL 2262
BD64S
00m0
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CM 1241 siemens
Abstract: transistor b 1238 DECT siemens transistor bf 196 bfp196
Text: SIEMENS BFP196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dE at 900MHz
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BFP196
900MHz
Q62702-F1320
OT-143
900MHz
CM 1241 siemens
transistor b 1238
DECT siemens
transistor bf 196
bfp196
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BD645
Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors
Text: G DI E SOLI» STATE 3875081 G E SOLID D[f| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts
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BD643,
BD645,
BD647,
BD649
O-22QAB
RCA-BD643,
BD649
1500b
BD645
BD647
darlington bd647
D 17275
n69s
BD643
B13 transistors
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B0643
Abstract: d 17275 BD649C
Text: G DI E SOLI» STATE 3875081 G E SOLID File N um ber D[f| 3Û7S0Ô1 0017573 L> Ò 1É STATE 17273 ~ _ Darlington Power Transistore 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts
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BD643,
BD645,
BD647,
BD649
O-220AB
RCA-BD643,
BD649
1500b
B0643
d 17275
BD649C
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Untitled
Abstract: No abstract text available
Text: 19-1155: RevO. 11/96 +2.7V, Low -Pow er, 12-Bit S e ria l A D C Features +2.7V to +5.25V Single Supply 12-Blt Resolution Small Footprint: 8-Pin DIP and SO Packages Low Power: 3mW 73ksps 66iiW (1ksps) 3pW (power-down mode) Internal Track/Hold, 73ksps Sampling Rate
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12-Bit
73ksps
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Untitled
Abstract: No abstract text available
Text: Data Sheet November 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, a n d T M IA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ ential transceiver circuits that transmit and receive
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DS98-042H
DS97-465H
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Untitled
Abstract: No abstract text available
Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1
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2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F
2SD1898
1260/2S
2SB1181.
SC-62
2SD1768S
2SD1733
2SD1863)
2SD1898)
2SD1381F)
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Untitled
Abstract: No abstract text available
Text: SOLID STATE IGBT GATE DRIVER MODULE TF1206 Unit m TOSHIBA TF1206 is the IGBT gate driver de 41 .5 MAX signed for use with TOSHIBA Insulated Gate mm 9 MAX Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Y Using this driver, you can design
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TF1206
TF1206
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet + March 1997 microelectronics ~ ~ group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features Description • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
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26LS31
26LS3107914384
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lucent btk1a16g
Abstract: No abstract text available
Text: Preliminary Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, andTMIA Features Description Driver Features TheTKI A, TL1A, and TM1A devices are dual differ ential transceiver circuits that transmit and receive
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16-pin,
lucent btk1a16g
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BPNPA16P
Abstract: No abstract text available
Text: Data Sheet November 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
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26LS31
TT350
BPNPA16P
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Untitled
Abstract: No abstract text available
Text: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations Quad Differential Drivers BDG1A, BDP1 A, BDGLA, BPNGA, BPNPA, and BPPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
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26LS31
BPNPA16E-TR
BPNPA16G
16-pin,
BPNPA16G-TR
BPNPA16P
BPPGA16E
BPPGA16E-TR
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Untitled
Abstract: No abstract text available
Text: Data Shoot November 1998 ¡Tiícroslsctronícs Group Lucent Technologies Bell Labs Innovations Quad Differential Drivers BDG1A, BDP1 A, BDGLA, BPNGA, BPNPA, and BPPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
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26LS31
outNPA16G-TR
BPNPA16P
16-pin,
BPPGA16E
BPPGA16E-TR
BPPGA16G
BPPGA16G-TR
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Untitled
Abstract: No abstract text available
Text: Data Sheet August 1997 microelectronics group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, an d T M IA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ ential transceiver circuits that transmit and receive
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DS97-465HSI
DS97-231LDRT)
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transistor b 1238
Abstract: fld pcb
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has
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BUK9840-55
OT223
OT223.
transistor b 1238
fld pcb
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transistor Z8W
Abstract: s parameters 4ghz 2SC1241 J260 The Transistor Manual 2sa The Transistor Manual 2sa 15 2SA703 "z5w" z8w TRANSISTOR
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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210nS
200MHz)
transistor Z8W
s parameters 4ghz
2SC1241
J260
The Transistor Manual 2sa
The Transistor Manual 2sa 15
2SA703
"z5w"
z8w TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Data Sheet November 1997 mi cr oel ect roni cs group Lucent Technologies Bell Labs Innovations Dual Differential Transceivers TK1A,TL1A, andTMIA Features Description Driver Features The TK1 A, TL1 A, and TM1A devices are dual differ ential transceiver circuits that transmit and receive
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DS98-042HSI
DS97-465HSI)
005002t,
302B171
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Untitled
Abstract: No abstract text available
Text: >kiyixi>ki 19-1155; Rev 2 ; 11/98 EV M .U M '°N *aT +2. 7V, L o w - P o w er, 12 - B i t S e r i a l A D C s in 8 - Pi n SO Power consum ption is only 37m W V d d = 3V at the 7 3ksps m axim um sam pling sp e e d . A 2pA shutdow n mode reduces power at slower throughput rates.
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MAX1240)
MAX1241)
12-Bit
73ksps,
MAX1240/MAX1241
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2SA1241
Abstract: 2SC3076
Text: T O S H IB A 2SC3076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Collector Saturation V oltage : V CE (sat) = 0.5 V (Max.) (IC = 1 A) E xcellen t Sw itching Tim e : tgtg = 1.0
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2SC3076
2SA1241
2SA1241
2SC3076
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