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    K/702 P TRANSISTOR Search Results

    K/702 P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    K/702 P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    702 y TRANSISTOR

    Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701 PDF

    702 A TRANSISTOR

    Abstract: TRansistor 701 702 P TRANSISTOR
    Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 MJE703STU 702 A TRANSISTOR TRansistor 701 702 P TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 PDF

    transistor H 802

    Abstract: No abstract text available
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 transistor H 802 PDF

    transistor H 802

    Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild
    Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 E800STU transistor H 802 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild PDF

    MJE800

    Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent
    Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 O-126 MJE802STU MJE800 TRANSISTOR S 802 MJE800/801/803 equivalent PDF

    transistor k 702

    Abstract: TRANSISTOR S 802 kse800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802 PDF

    sot 23 transistor 70.2

    Abstract: LTA 702 N k/702 P transistor
    Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


    OCR Scan     		JE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 GQG77fe sot 23 transistor 70.2 LTA 702 N k/702 P transistor PDF

    702 P TRANSISTOR

    Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor
    Text: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -


    OCR Scan     		KSE700/701/702/703 KSE800/801/802/803 KSE700/701 702 P TRANSISTOR LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor PDF

    bd437 siemens

    Abstract: transistor d437 D437 transistor bd 439
    Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase


    OCR Scan     		QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439 PDF

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Text: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701 PDF

    702 Z TRANSISTOR

    Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
    Text: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS


    OCR Scan     		MJE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 O-126 702 Z TRANSISTOR 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701 PDF

    EL 14v 4c

    Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
    Text: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten


    OCR Scan     		Q62702-D98-V1 Q62702-D98-V2 Q62702-D98 Q62901-B11â Q62901-B EL 14v 4c z06m transistor 1B transistor 7g BDY39 Transistor bdy 11 PDF

    SAS SOT23

    Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG
    Text: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on


    OCR Scan     		OT-23 SAS SOT23 SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG PDF

    702 TRANSISTOR

    Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
    Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS


    OCR Scan     		MJE700/701 MJE800/801/802/803 MJE702/703 702 TRANSISTOR 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE bbS3^31 D0Efle 4cJ m BLV25 D IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. Features: • internally matched input fo r wideband operation and high power gain;


    OCR Scan     		BLV25 PDF

    ic bsp 350

    Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87
    Text: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in


    OCR Scan     		OT-223, OT-89, 702-S 62702-S E6288: E6325: ic bsp 350 A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87 PDF

    blv 33 transistor

    Abstract: BLV25 rf 2222 vp1020 multilayer
    Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;


    OCR Scan     		BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer PDF

    MJE801

    Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
    Text: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.


    OCR Scan     		MJE700 MJE703 MJE800 MJE803 MJE701 MJE801 MJE702 MJE802 MJE803 ISeeAN-415) JE700 je802 transistor mje802 TRANSISTOR JC 515 PDF

    BR101

    Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62


    OCR Scan     		BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 OT143 BRY62 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702 PDF

    2N3441

    Abstract: 3441
    Text: 2 N 3441 Nicht für N eu en tw icklu n g N P N -Leistungs-Transistor fü r N F -V e rs tä rk e r und Schalteran w en dungen 2 N 3441 ist ein einfachdiffundierter NPN-Silizium-Transistor im Gehäuse T O -6 6. Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor 2 N 3441 eignet sich besonders als


    OCR Scan     		Q62702-D34 Q62902-B11-A Q62902-B11-B 2N3441 3441 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTOCOUPLER PS2702-1 ,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES nepoc series DESCRIPTION T he P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d Isolators c o n ta in in g a G aA s light em ittin g d io d e and an


    OCR Scan     		PS2702-1 PS2702-2 PS2702-4 P11307EJ6V0DS00 2702-1-E 2702-1-F PDF

    digital transistor array

    Abstract: marking 702 sot363
    Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration


    OCR Scan     		OT-363 digital transistor array marking 702 sot363 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon AF Transistors • • • • • BCP 68 For general AF application High co lle cto r current High collecto r gain Low co lle cto r -em itter saturation voltage C om plem entary type: BCP 69 PNP T ype M a rk in g O rd e rin g c o d e (1 2 -m m ta p e )


    OCR Scan     		OT-223 300ps; PDF