JUPD431008 Search Results

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ÎPD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The JUPD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V + 0.3 V.

Contextual Info: NÇY 1 ¿ flN Z NEC NEC Electronics Inc. JUPD431008 131,072 x 8-Bit Static CMOS RAM October 1992 Description Pin Configuration The / jPD431008 is a 131,072-word by 8-bit s ta tic RAM fab ric a te d w ith advanced silicon-gate technology. Its unique design uses CM O S peripheral circuits and Nchannel m em ory cells to m ake the pPD431008 a high­

d431008

Abstract: OA12AO
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The /¿PD431008 is a high speed, lo w power, 1 048 576 bits 131 072 w o rds by 8 bits CMOS sta tic RAM. The /JPD431008 is packed in 32-pin plastic SOJ.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD431008L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT D e s c rip tio n The /JPD431008L is a high speed, lo w pow er, 1, 048, 576 bits 131, 072 w o rd s by 8 bits CMOS sta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The /¿PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

d431008

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description T h e ¿¡P D 431008 ¡s a h ig h sp e e d , lo w p o w e r, 1 0 4 8 576 b its 131 072 w o rd s b y 8 b its C M O S s ta tic R A M . T h e j i P D 4 3 1 00 8 is p a cke d in 32-p in p la s tic S O J .

Contextual Info: NEC NEC Electronics Inc. fiPD431008 131,072 X 8-Bit Static CMOS RAM Description Pin Configuration The /JPD431008 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /yPD431008 a high­

d431008

Abstract: IC-3242
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description T h e /JP D 431008 is a h ig h s p e e d , lo w p o w e r, 1 04 8 576 b its 131 0 7 2 w o r d s b y 8 b its C M O S s ta tic R A M . T h e /JP D 431008 is p a c k e d in 3 2 -p in p la s tic S O J.