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    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ÎPD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The JUPD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V + 0.3 V.


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    PDF uPD431008L JUPD431008L 32-pin uPD431008LLE-A17 uPD431008LLE-A20 PD431008L uPD431008LLE

    Untitled

    Abstract: No abstract text available
    Text: NÇY 1 ¿ flN Z NEC NEC Electronics Inc. JUPD431008 131,072 x 8-Bit Static CMOS RAM October 1992 Description Pin Configuration The / jPD431008 is a 131,072-word by 8-bit s ta tic RAM fab ric a te d w ith advanced silicon-gate technology. Its unique design uses CM O S peripheral circuits and Nchannel m em ory cells to m ake the pPD431008 a high­


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    PDF JUPD431008 jPD431008 072-word pPD431008 32-pin

    d431008

    Abstract: OA12AO
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The /¿PD431008 is a high speed, lo w power, 1 048 576 bits 131 072 w o rds by 8 bits CMOS sta tic RAM. The /JPD431008 is packed in 32-pin plastic SOJ.


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    PDF 128K-WORD uPD431008 32-pin PD431008m /PD431008. JPD431008 iiPD431008LE: d431008 OA12AO

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD431008L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT D e s c rip tio n The /JPD431008L is a high speed, lo w pow er, 1, 048, 576 bits 131, 072 w o rd s by 8 bits CMOS sta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.


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    PDF uPD431008L 128K-WORD /JPD431008L PD431008L 32-pin /iPD431008LLE-A17 iiPD431008LLE-A20 0081o /iPD431008L.

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The /¿PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF PD431008L PD431008L //PD431008L 32-pin fjPD431008LLE-A17 /JPD431008LLE-A20 DDbM31S iiPD431008LLE:

    d431008

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description T h e ¿¡P D 431008 ¡s a h ig h sp e e d , lo w p o w e r, 1 0 4 8 576 b its 131 072 w o rd s b y 8 b its C M O S s ta tic R A M . T h e j i P D 4 3 1 00 8 is p a cke d in 32-p in p la s tic S O J .


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    PDF uPD431008 128K-WORD d431008

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. fiPD431008 131,072 X 8-Bit Static CMOS RAM Description Pin Configuration The /JPD431008 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /yPD431008 a high­


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    PDF fiPD431008 /JPD431008 072-word /yPD431008 /L/PD431008 32-pin tPD431008 JUPD431008 JJPD431008

    d431008

    Abstract: IC-3242
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description T h e /JP D 431008 is a h ig h s p e e d , lo w p o w e r, 1 04 8 576 b its 131 0 7 2 w o r d s b y 8 b its C M O S s ta tic R A M . T h e /JP D 431008 is p a c k e d in 3 2 -p in p la s tic S O J.


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    PDF uPD431008 128K-WORD 016tooo5 juPD431008 d431008 IC-3242