ze 003
Abstract: LZE12W
Text: SUNLED CORPORATION _ _ - _ , . _ _ 20793 E. VALLEY BLVD. #C S U^ LED WALNUT.CA.91789, U.S.A. E-MAIL : sales@sunled.com URL ADDRESS : http://www.sunled.com LZE12W 27 1.063 MIN. 8.6(.339) <|)5.9(.232) NOTES: 1JJI dimensions am In mHlimeters(lnches) 2.Toierance Is ± 0.25mm(0.0V)unless otherwise noted.
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LZE12W
LZE12W
JUN15
ze 003
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zs transistor
Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
Text: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package
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BFS460L6
BFR460L3)
Jun-15-2004
zs transistor
BFR460L3
BFS460L6
smd transistor marking zs
smd transistor 6b1
smd transistor zl
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KL6448USTS-FW
Abstract: Kyocera lcd kl6448usts I2121 640X480 32PK kyocera 45 mp d kyocera 45 mp y
Text: Received: 6 / IS/95; 1 :32Py; JUM -15-195G 300 13 = FROM 695 9804 => EARTH COMPUTER ; #1 KYOCERfi t'ftMCOLUER TO I94'j3bi2i2i p .eei % a i4 r ' brand fax trartsmittal memo 7571 | # ef pages ¡s^ / / A/ ICOtPSp; ? £ yi/ „ Pp. fs LlyA< J.Ijj >>•/ vj v
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JUM-15-1993
194J3S12121
KL6448USTS
S7UWF0TG0C07
1949Z
KL6448USTS-FW
Kyocera lcd kl6448usts
I2121
640X480
32PK
kyocera 45 mp d
kyocera 45 mp y
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Untitled
Abstract: No abstract text available
Text: A Q Û rv n n v O ' * — C N I ' D L O C O I'''O O C D O ''— C N I'O '^ -LO t— «— 1— <— <— t— «— CMCNCNCNCNCM -cNro^-mcoi^ooo^ f BBBBBBBBBBBBBBBBBBBBBBBBB e BBBBBBBBBBBBBBBBBBBBBBBBB d BBBBBBBBBBBBBBBBBBBBBBBBB c BBBBBBBBBBBBBBBBBBBBBBBBR b
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76MmMlN.
25/umMlN.
Jun15.
NCB-125SMPG1
-125SMP6-f
NCB00093
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28c10
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
28c10
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Untitled
Abstract: No abstract text available
Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60A.
BAT60A
OD323
100ms
Jun-15-2004
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Untitled
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
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Untitled
Abstract: No abstract text available
Text: ^ _ 5_ I_ 5_ I_ £_ I_ o 16 .7 [.6 5 7 ] 16.00 [.6 3 0 ] 3.18 [.1 2 5 ] 16 .3 5 [.6 4 4 ] [O -TIN DIPPED ZONE 1 □ : F 6.78 [.2 6 7 ] _ i 3.18 [.1 2 5 ] 3.94 [.1 5 5 ] TOLERANCES: + / - 0.05[.002],
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SEP29/12
RJE74
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BAT60B
Abstract: No abstract text available
Text: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60B.
BAT60B
OD323
100ms
Jun-15-2004
BAT60B
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Maxim date code
Abstract: MAX810JEUR maxim cross reference sot 23 mark 06 Direct Replacement MAX809 CROSS MAX809teur MAX803REUR MAX803MEUR Cross Reference sot23
Text: Solved by Design Solution # 23 TM Sipex replacement for MAX803/809/810 3 pin Microprocessor Reset Circuits Date: June 01, 2006 Designed by: Mark Boermeester mboermeester@sipex.com Part Number: SP809, SP809N and SP810 Application Description: Replace MAX803/809/810 with Sipex solution
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MAX803/809/810
SP809,
SP809N
SP810
SP810
MAX803,
MAX809
Maxim date code
MAX810JEUR
maxim cross reference
sot 23 mark 06
Direct Replacement
MAX809 CROSS
MAX809teur
MAX803REUR
MAX803MEUR
Cross Reference sot23
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 2.0 0.079 1 REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED MOUNTING FEATURE SEP10/12 S.M APP'D 1 9.63 0.379 19.77 0.778 4X 2 3.40 0.134 15.32 0.603 12.00 0.472 4.00 0.157
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JUN20/12
JUN21/12
SEP10/12
937RENCE
P-DWR-L1P-C1000-1G5
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 APP'D S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED THUMB SCREW MOUNTING SEP10/12 S.M 1 1 THUMB SCREWS 2 PIECES PER CONNECTOR SEE NOTE 4 GRID HOLDER COOLBAND GRID 19.77
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JUN20/12
JUN21/12
SEP10/12
P-DWR-L1S-C1000-1G5
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CHN 510
Abstract: No abstract text available
Text: 1. D im ensions: 2 .S c h e m a t ic : Chip 0.098 -0.030 10 Side Line Side 0.490 Max 10 ±0.005 9 XFMR5 6 LO cl O CD XFADS LO Ul o X 3.E le c t r ic a l S p e c if ic a t io n s: @25°C YYWW 0.008Min sol at i on: Tape 2000Vrms PIN 10 —6 0CL: 0.510 Max 475uH±5%
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2000Vrms
PIN10-6
475uHÂ
10KHz
100mV
100NHz,
25KHz-1
40bdB
100NHz
100NHz
CHN 510
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Untitled
Abstract: No abstract text available
Text: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion
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BAT60A.
BAT60A
OD323
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