JUN15 Search Results

ze 003

Abstract: LZE12W
Contextual Info: SUNLED CORPORATION _ _ - _ , . _ _ 20793 E. VALLEY BLVD. #C S U^ LED WALNUT.CA.91789, U.S.A. E-MAIL : sales@sunled.com URL ADDRESS : http://www.sunled.com LZE12W 27 1.063 MIN. 8.6(.339) <|)5.9(.232) NOTES: 1JJI dimensions am In mHlimeters(lnches) 2.Toierance Is ± 0.25mm(0.0V)unless otherwise noted.

zs transistor

Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
Contextual Info: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

KL6448USTS-FW

Abstract: Kyocera lcd kl6448usts I2121 640X480 32PK kyocera 45 mp d kyocera 45 mp y
Contextual Info: Received: 6 / IS/95; 1 :32Py; JUM -15-195G 300 13 = FROM 695 9804 => EARTH COMPUTER ; #1 KYOCERfi t'ftMCOLUER TO I94'j3bi2i2i p .eei % a i4 r ' brand fax trartsmittal memo 7571 | # ef pages ¡s^ / / A/ ICOtPSp; ? £ yi/ „ Pp. fs LlyA< J.Ijj >>•/ vj v

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28c10

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: ^ _ 5_ I_ 5_ I_ £_ I_ o 16 .7 [.6 5 7 ] 16.00 [.6 3 0 ] 3.18 [.1 2 5 ] 16 .3 5 [.6 4 4 ] [O -TIN DIPPED ZONE 1 □ : F 6.78 [.2 6 7 ] _ i 3.18 [.1 2 5 ] 3.94 [.1 5 5 ] TOLERANCES: + / - 0.05[.002],

BAT60B

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Maxim date code

Abstract: MAX810JEUR maxim cross reference sot 23 mark 06 Direct Replacement MAX809 CROSS MAX809teur MAX803REUR MAX803MEUR Cross Reference sot23
Contextual Info: Solved by Design Solution # 23 TM Sipex replacement for MAX803/809/810 3 pin Microprocessor Reset Circuits Date: June 01, 2006 Designed by: Mark Boermeester mboermeester@sipex.com Part Number: SP809, SP809N and SP810 Application Description: Replace MAX803/809/810 with Sipex solution

Contextual Info: A B C D E G F H REVISIONS 2.0 0.079 1 REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED MOUNTING FEATURE SEP10/12 S.M APP'D 1 9.63 0.379 19.77 0.778 4X 2 3.40 0.134 15.32 0.603 12.00 0.472 4.00 0.157

Contextual Info: A B C D E G F H REVISIONS REV DESCRIPTION, ECN, EAR NO. DATE A PRODUCT DRAWING JUN20/12 APP'D S.M B UPDATED TOLERANCES JUN21/12 S.M C ADDED THUMB SCREW MOUNTING SEP10/12 S.M 1 1 THUMB SCREWS 2 PIECES PER CONNECTOR SEE NOTE 4 GRID HOLDER COOLBAND GRID 19.77

CHN 510

Contextual Info: 1. D im ensions: 2 .S c h e m a t ic : Chip 0.098 -0.030 10 Side Line Side 0.490 Max 10 ±0.005 9 XFMR5 6 LO cl O CD XFADS LO Ul o X 3.E le c t r ic a l S p e c if ic a t io n s: @25°C YYWW 0.008Min sol at i on: Tape 2000Vrms PIN 10 —6 0CL: 0.510 Max 475uH±5%

Contextual Info: BAT60A. Silicon Schottky Diode • High current rectifier Schottky diode with extreme low VF drop typ. 0.12V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion