JUL200 Search Results

65A6

Abstract: P-FBGA289
Contextual Info: E ï3 JuL2003 -oooooooooiooooooooo -OOOOOOOOOIOOOOOOOOO o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o o o oo oo oo oioo oo oo oo o oooooo oo o o o o oooooo oo o o o o 100.0000_ I_oooooo. OOOOOO • I ■ o'oooóo

Contextual Info: T H I5 D R A W IN G IS U N P U B L I S H E D . COPYRIGHT 19 RELEASED BY AMP INCORPORATED. FOR ALL LOC PUBLICATION RIGHTS RESERVED. REV I S IONS D IST DY LTR DATE DESCRIPTION ;JUL2008 NPR PER E C R - 08 - 0 I4 3 0 5 DWN A PV D S YJ LSF NOTES m □ — H HRnRnRRnRnRRnRnRRnRnHHHHHHHHHHHHHHHHHHHH

OVEN

Abstract: ATE ESP
Contextual Info: T H 1S DRAW jP NG 1S COPYRIGHT U N P U B L 1S H E D . 19 RELEASED BY AMP 1N C O R P O R A T E D . FOR ALL PUBLICATION RIGHTS ,19 LOC REV IS IONS DIST RESERVED. D E S C R I P T IO N R E V I S E P E R ECR- -0 1 5 3 7 7 DK 3 JUL2006 UN I V E R S A L H E A T C U R E B L O C K

MP1470

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION REVISED NTERLOCKING DWN DATE PER 0G3B - 0 3 2 6 - 0 I . 4 JUL200 I APVD EZ FEATURE 2 M M ~TT

Contextual Info: Jul2003 resTsi Il's9 '01 U' 0> OOOOOÔÔOOOOOOOOOOOOOOOOOÔ ooooooooooooooooooooooooo OOOOOOOOOOOOOOOOOOOOOOOOO 00 00 00 00 00 009000000000000 ooooooooooooooooooooooooo ooooooooooooooooooooooooo 000000 ! I 000000 OOOOOO OOOOOO OOOOOO OOOOOO OOOOOO & -1- o e o e w :

Contextual Info: TH I S D R AW I NG IS UNPUBLI SHED. C O P Y R I G H T 20 RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL 20 PUBLICATION RIGHTS LOC D I ST R E V LTR IO N S DESCRIPTION Al & RELEASED I2 N O V 2 00 7 S. REVISED 0 9 JUL2008 s. REVISED 0 I OC T 2 0 0 9 T.S

PBT GF 10

Abstract: joint interfacial PBT GF
Contextual Info: THIS DR AWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 20 L OC 0.2 0.2 <> AI-A2 D=-<] 6.05 — 6.05 / E R 0 0 -0089 -04 o i JUL2004 T . Gr J . Dr Ajout cotes manquantes 13JUN2005 P.CS J . Dr

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR REVISED INTERLOCKING _n_ M DWN DATE DESCRIPTION PER 0G3B - 0 3 2 6 - 0 I APVD EZ . 4 JUL200 I FEATURE

Contextual Info: 0O.92±O.O8 15.00 <> AMP LOGO i o o ♦ C D < L 02.3±O.O8 V C M m _ 2 0 0 .1 0 I— li o -H o O O» 00 I LT t I P.C.B EDGE C 12.50 3.50 o o O m o _ l CM _ l CL CL o C\j CM m RECOMMENDED PCB LAYOUT 1.00 2.80 TYP i L 1 U- 1 C\l □ 1 1 NOTE: _ _ □

STPS2L60U

Abstract: "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14
Contextual Info: STPS2L60 Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature package ■ Avalanche capability specified ■ ECOPACK2 compliant component SMB flat A K DO-41 STPS2L60 Description Axial and surface mount power Schottky rectifiers

604g transistor

Abstract: 606G 608G 610G KBJ604G KBJ610G
Contextual Info: LITE-ON SEMICONDUCTOR KBJ604G thru KBJ610G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 6.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic

GBJ2004

Abstract: GBJ2006 GBJ2008 GBJ2010
Contextual Info: LITE-ON SEMICONDUCTOR GBJ2004 thru GBJ2010 REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 20 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

SBF2060CT

Abstract: 2060CT
Contextual Info: SBF2050CT thru 2060CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 50 to 60 Volts FORWARD CURRENT – 20 Amperes FEATURES ITO-220AB • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency

Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS EP6KE SERIES REVERSE VOLTAGE - 6.8 to 20 Volts POWER DISSIPATION - 600 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

Contextual Info: B0520W thru B0540W SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 0.5 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Conductance • Guard Ring Construction for Transient Protection SOD-123 Dim. Min.

30 MBR

Contextual Info: LITE-ON SEMICONDUCTOR MBR3030PTL thru 3060PTL REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: B520C thru B540C REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted applications SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

marking code diode R12

Abstract: marking R12 STPR120A pr sma package pr sma marking pr sma
Contextual Info: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE Table 1: Main Product Characteristics IF AV 1A VRRM 200 V Tj (max) 150°C VF(max) 0.74 V trr (max) 35 ns SMA (JEDEC DO-214AC) STPR120A FEATURES AND BENEFITS • ■ ■ ■ Very low switching losses Low forward voltage drop

Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 2005 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 2005 L OC RESERVED. D I ST R E V I S I ON S A LTR DESCRIPTION DWN DATE APVD DRWG. revised JUL2005 KS BF ECR-05-007702 13DEC 2005

PAD105

Contextual Info: B240LA SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – FORWARD CURRENT – 40 Volts 2.0 Amperes FEATURES • For surface mounted applications SMA • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

P4KE11A

Abstract: P4KE10A Lite-On Power Semiconductor
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P4KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 400 WATTS DO-41 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

KDXA01

Contextual Info: LITE-ON SEMICONDUCTOR Sidac High Voltage Sillicon Bidirectional Thyristors SD09A-D SERIES SIDACS 0.9 AMPERES RMS 105 thru 240 VOLTS FEATURES High pulse current capability, typ=120A/us Glass passivation insures reliable operation Compact package, T1 Package

mbrf10150ct

Abstract: 10200c
Contextual Info: LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT REVERSE VOLTAGE - 150 to 200 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES M B DIM. K A D PIN 94V-0 2 Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams

BV 3145

Abstract: IR 4065
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability