JJ20-11
Abstract: RS16 JJ SOT23 sot23 code JJ DS21455 DS2155 MAX9140 MAX999 TS16 E1 frame
Text: Maxim > App Notes > TELECOM Keywords: JJ-20.11, Japanese, CMI, PBX Sep 23, 2005 APPLICATION NOTE 3604 JJ-20.11-Compatible Interface for the DS2155 and DS21455 SCTs Abstract: The Dallas Semiconductor DS2155 or DS21455 single-chip transceiver SCT can be used to create an interface
|
Original
|
PDF
|
JJ-20
11-Compatible
DS2155
DS21455
JJ20-11
RS16
JJ SOT23
sot23 code JJ
MAX9140
MAX999
TS16
E1 frame
|
ALLOY leadframe C7025 material property
Abstract: smd code marking 56L 20L SMD SOT-23 9l marking sot23 ALLOY leadframe C7025 lead frame cu C194 marking code 56l 100L C194 C7025
Text: A Structured Approach To Lead-Free IC Assembly Transitioning L. Nguyen, R. Walberg, Z. Lin*, T. Koh*, YY Bong*, MC Chua*, S. Chuah*, JJ Yeoh* National Semiconductor Corp. P.O. Box 58090 M/S 19-100 Santa Clara, CA 95052-8090 * National Semiconductor, Singapore
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT ZENER DIODES MMBZ5225B-MMBZ5267B Surface Mount Zener Diodes Features • • • • • Planar Die construction 350mW Power Dissipation Standard Zener Voltage Tolerance is ± 5 % Ideally Suited for Automated Assembly Processes High temperature soldering guaranteed: 260 °C / 10 seconds
|
Original
|
PDF
|
MMBZ5225B-MMBZ5267B
350mW
OT-23
OT-23,
MIL-STD-202G,
|
sot23 code JJ
Abstract: zener 8m marking code 8T jj sot23 marking code MAX diode zener marking 58 MMBZ5227B 8B MMBZ5225B MMBZ5226B MMBZ5228B
Text: 350mW Surface Mount Zener Diodes MMBZ5225B-MMBZ5267B 350mW Surface Mount Zener Diodes Features • • • • • Planar Die construction 350mW Power Dissipation Standard Zener Voltage Tolerance is ± 5 % Ideally Suited for Automated Assembly Processes High temperature soldering guaranteed: 260 °C / 10 seconds
|
Original
|
PDF
|
350mW
MMBZ5225B-MMBZ5267B
OT-23
OT-23,
MIL-STD-202G,
sot23 code JJ
zener 8m
marking code 8T
jj sot23
marking code MAX
diode zener marking 58
MMBZ5227B 8B
MMBZ5225B
MMBZ5226B
MMBZ5228B
|
Darlington transistor T7 27
Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Text: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)
|
OCR Scan
|
PDF
|
MPSA25
625mW
Darlington transistor T7 27
Samsung s3
mpsa25
p 605 transistor equivalent
R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
|
Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT 2N3904 SMALL SIGNAL TRANSISTORS NPN _ M 2 0.181 ( 4 .6 ) FEATURES 0 . 1 4 2 (3 .6) ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Jj M ♦ As complementary type, the PNP transistor
|
OCR Scan
|
PDF
|
2N3904
2N3906
OT-23
MMBT3904.
500ms
|
marking h3
Abstract: JJ SOT23
Text: MOTOROLA SC ~3M -CDIODES/OPTOï 6367255 MOTOROLA SC D eT | l 3L,75SS 003S577 34C CD I O D E S / O P T O 1 38277 T ' | D 3 7 - JJ SOT23 continued) MMBA956H3,4,5,6 DEVICE NO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW U c I I • Designed for general-purpose amplifier and switching
|
OCR Scan
|
PDF
|
003S577
MMBA956H3
MMBA956H4
MMBA956H5
MMBA956H6
40tions
marking h3
JJ SOT23
|
Untitled
Abstract: No abstract text available
Text: ¡ jj H S E MA I C OR N DR U C TIS O R HFA3134, HFA3135 " " " • W ■ W " J M mm M ■ W ' U W W Ultra High Frequency Matched Pair Transistors February 1998 Description Features • NPN Transistor f r . 8.5GHz
|
OCR Scan
|
PDF
|
HFA3134,
HFA3135
HFA3134
HFA3135
1-800-4-HARRIS
|
sot23 code JJ
Abstract: AS440
Text: ALPHA SEMICONDUCTOR AS440 Excellence in Analog Power Products Voltage Detector Proposed Specification FEATURES APPLICATIONS ^ • • • • • • MicroprocessoiJLeMi • Battery Status IWcaKW• Level • P o w » jj^ k e « te c to r • S fttc lu K Qffcuit in Battery Backup
|
OCR Scan
|
PDF
|
AS440
OT-23,
OT-89,
sot23 code JJ
AS440
|
MMBTH11
Abstract: MMBTH24 MMBT5179 MMBT918 MMBTH10 MMBTH20 MMBTH34
Text: This Surface Mount Transistors Material IT a fc-> In b-> ÜÜ □ Surface Mount Transistors NPN RF Amplifiers and Oscillators Case Style ^CBO V CEO ^ EB O V (V) (V) Min Min Min *CBO V <nA)@ “ Max 'v' h FE @ ‘c & .- . Device No. (SOT-23 Mark) ^ JJ
|
OCR Scan
|
PDF
|
OT-23
MMBT5179
O-236
MMBTH10
MMBT918
MMBTH11
650mA)
MMBTH11
MMBTH24
MMBT5179
MMBT918
MMBTH10
MMBTH20
MMBTH34
|
Untitled
Abstract: No abstract text available
Text: _ ? ^ r i U JJ|^ l T r P Today’s Results.Tomorrow1! Vision I I •■ Revised - February 15, 1999 Low Capacitance TVS Diode For High-Speed Data Interfaces TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SL series of TVS arrays are designed to protect
|
OCR Scan
|
PDF
|
TEL805-498-2111
OT-23
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D | 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)
|
OCR Scan
|
PDF
|
G007333
MPS6602
825mW
T-29-21
MPS6601
|
Untitled
Abstract: No abstract text available
Text: BAV70 3+0.1 Silicon Epitaxial Planar Diode fast sw itching dual diode w ith com m on cathode. — - i ! • 0.95 0.95 JJ M. Ot m Top View a M arking "1 Ö I s F Top V ie w 1 'Î1 ' ! m 1 T SOT-23 Plastic Package W eight approx. 0.008 g D im ensions in m m
|
OCR Scan
|
PDF
|
BAV70
OT-23
15eristic
|
MMBTH34
Abstract: fet sot23-3
Text: . O ctob e r 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device w as designed fo r com m on-em itter low noise am plifier and m ixer applications in th e 100 jj-A to 15 m A range to 300 MHz, and low frequency drift com m on-base VHF oscillato r applications w ith high output levels fo r driving
|
OCR Scan
|
PDF
|
MMBTH34
fet sot23-3
|
|
diode marking DL
Abstract: marking code JD BAW56 SOT23 JE IMBD4148-A2 A3 marking diode marking code 10 sot23 BAL99 BAV100 BAV101 BAV102
Text: Surface M o u n t Sw itching Diodes 350mW Switching Diodes/SOT23 M a rk in g Code* Peak Reverse Voltage Maximum Reverse C u rre n t @ 25°C Capacitance V R = VF = 0 Reverse R ecovery T im e @ VpK V u. lR ma > vR PRV V _U- M a x im u m F o rw a rd V olta g e D rop
|
OCR Scan
|
PDF
|
350mW
Diodes/SOT23
BAV70
BAV99
BAW56
BAL99
IMBD4148
IMBD4448
500mW/MiniMELF
DL/LL4148
diode marking DL
marking code JD BAW56
SOT23 JE
IMBD4148-A2
A3 marking diode
marking code 10 sot23
BAV100
BAV101
BAV102
|
Untitled
Abstract: No abstract text available
Text: LS S260-DO y e llo w LY S260-DO GREEN LG S260-DO SUPER-RED/GREEN LU S250-DO SUPER-RED/SUPER-RED LV S260-DO GREEN/GREEN LW S260-DO SIEMENS SUPER-RED SOT23 Surface Mount MULTILED LED Lamp FEATURES • Colored, diffused package - LU: colorless - L.V/LS: red
|
OCR Scan
|
PDF
|
S260-DO
S250-DO
18-pln
fl535t
|
6pin vhz
Abstract: AX4270
Text: 1GHz SOT23 Op Amps Consum e Only 6mA O .ldB G ain F la tn e ss to 300M Hz an d 1700V /jis Slew R ate The M AX4223-M AX 4228 fam ily of u ltra -h ig h -s p e e d , low -pow er am plifiers fe a tu r e s low d is to rtio n , 80m A o u tp u t current, and excellent video specifications
|
OCR Scan
|
PDF
|
AX4223-M
MAX4224/7/8)
10MHz)
X4265*
AX4266*
AX4267'
X4268*
AX4269*
X4270*
16-pin
6pin vhz
AX4270
|
JJ SOT23
Abstract: 0A81 IR100
Text: BAS19 BAS20 BAS21 SWITCHING TIME TEST DATA Recovery Time Equivalent Test Circuit Pulse Generator DUT Sampling Oscilloscope Rin =50n RS =50fi +|F trr t Input Signal Output Signal Input Signal Reverse Pulse Duration tp 100ns Rise Tim e tr 0.35ns C ircuit Capacitance*
|
OCR Scan
|
PDF
|
BAS19
BAS20
BAS21
100ns
100mA
JJ SOT23
0A81
IR100
|
Untitled
Abstract: No abstract text available
Text: r& T O K O TK11900 ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Supply Current ■ Portable Instrumentation ■ Low Power Shutdown Mode ■ Cordless Telephones ■ Low Noise Output ■ Pagers ■ Low Dropout Voltage ■ Toys ■ Extremely High Stability
|
OCR Scan
|
PDF
|
OT-23L)
TK11900
TK11900
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SOT-23 LED, Diffused LS S260, LY S260, LG S260 Besondere Merkmale • • • • • • eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar für alle SMT-Bestück- und Löttechniken geeignet gegurtet 8-mm-Filmgurt
|
OCR Scan
|
PDF
|
OT-23
|
maxim CODE TOP MARKING
Abstract: marking 25g sot23 diode marking DL maxim marking code JF MARKING CODE SOT23 marking code JD BAW56 1n4448w-v
Text: Fast Recovery Surface M ount Rectifiers Type Number Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Peak Reverse Voltage PRV Maxim um Forward Peak Surge Current l0 @ Ta VPK Maximum Forward Voltage @ 25°C T a Maximum Reverse Recovery
|
OCR Scan
|
PDF
|
DL4933
DL4934
DL4935
DL4936
DL4937
BAV100
BAV101
BAV102
BAV103
DL/LL4148
maxim CODE TOP MARKING
marking 25g sot23
diode marking DL
maxim marking code
JF MARKING CODE SOT23
marking code JD BAW56
1n4448w-v
|
Untitled
Abstract: No abstract text available
Text: SIEMENS LC SOT-23 LED, Diffused Low Current LED LS S269, LY S269, LG S269 Besondere Merkmale • • • • • • eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar hohe Lichtstärke bei kleinen Strömen typ. 2 mA für alle SMT-Bestück- und Löttechniken geeignet
|
OCR Scan
|
PDF
|
OT-23
|
marking code FA sot25
Abstract: regulator 712 L0u A
Text: r&îTO KO TK712XX LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Low Dropout Voltage ■ Battery Powered Systems ■ Low Quiescent Current ■ Portable Consumer Equipment ■ Very Stable Output ■ Cordless Telephones ■ Low Noise 35 |iVrms ■ Personal Communications Equipment
|
OCR Scan
|
PDF
|
OT-25)
TK712XX
TK712xx
OT-25
marking code FA sot25
regulator 712
L0u A
|
Untitled
Abstract: No abstract text available
Text: >ki>jxiyki 19-1284; Rev 0; 10/97 L o w - C o s t , Hi gh- Speed, Single-Supply, Gain o f +2 Buf f e r s w i t h Rai l -to-Rai l O u t p u t s in SOT23 Description The MAX4014/MAX4017/MAX4019/MAX4022 are p re ci sion, ciosed-ioop, gain of +2 or -1 buffers featuring
|
OCR Scan
|
PDF
|
200MHz
30MHz
-78dBc
-75dB
120mA
AX4019/M
AX4022
MAX4014
MAX4017
MAX4019
|