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| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
R K J 0822Contextual Info: TOSHIBA GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiTinnn 'w • ■ ir v w êt ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.) |
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GT10J311 jil25 100ii R K J 0822 |