JESD22A114HBM Search Results
JESD22A114HBM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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smd diode marking 271
Abstract: SIPMOS N-channel Small-Signal-Transistor
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BSP89 PG-SOT223 VPS05163 L6327: smd diode marking 271 SIPMOS N-channel Small-Signal-Transistor | |
Contextual Info: BSS192P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 • Qualified according to AEC Q101 • Halogenfree according to IEC61249221 |
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BSS192P PG-SOT89 IEC61249Â VPS05162 H6327: | |
BSL215C
Abstract: HLG09283 L6327
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BSL215C L6327: BSL215C HLG09283 L6327 | |
BSS138W
Abstract: gd 241 c L6327 DS48
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BSS138W PG-SOT-323 L6327: L6433: BSS138W gd 241 c L6327 DS48 | |
BSS131 L6327
Abstract: BSS131 L6327 PG-SOT23 V8192 d01a
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BSS131 PG-SOT-23 PG-SOT23 L6327: BSS131 L6327 BSS131 L6327 PG-SOT23 V8192 d01a | |
bsr802
Abstract: BSR802N GPS09473 HLG09474 L6327
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BSR802N PG-SC59 L6327 bsr802 BSR802N GPS09473 HLG09474 L6327 | |
diode k 1140
Abstract: D225 Diode 130P03LS
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BSC130P03LS 130P03LS diode k 1140 D225 Diode 130P03LS | |
D8145
Abstract: BSS126 L6327 PG-SOT23 PG-SOT-23
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BSS126 PG-SOT-23 L6327: L6906: D8145 BSS126 L6327 PG-SOT23 PG-SOT-23 | |
Contextual Info: BSP317P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated x Qualified according to AEC Q101 4 Ω -0.43 A Package PG-SOT223 4 Gate pin1 • Halogenfree according to IEC61249221 |
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BSP317P PG-SOT223 IEC61249Â VPS05163 H6327: BSP317P | |
Contextual Info: SPD04P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10PL PG-TO-252-3 PG-TO252-3 04P10PL | |
Contextual Info: BSD 223P OptiMOS-P Small-Signal-Transistor Feature Product Summary • Dual P-Channel VDS -20 V • Enhancement mode RDS on 1.2 Ω • Super Logic Level (2.5 V rated) ID -0.39 A • 150°C operating temperature PG-SOT-363 4 • Avalanche rated 5 6 • dv/dt rated |
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PG-SOT-363 IEC61249-2-21 PG-SOT-363 VPS05604 H6327: 3000pcs/r | |
Contextual Info: SPD04P10P G SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -100 V R DS on ,max 1 Ω ID -4 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 |
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SPD04P10P PG-TO252-3 04P10P | |
BSD235C
Abstract: marking GS4 sot D053 BSD235 BSD235C H6327
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BSD235C IEC61249-2-21 PG-SOT-363 H6327: BSD235C marking GS4 sot D053 BSD235 BSD235C H6327 | |
GS-10
Abstract: gs10 diode MARKING SFS
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BSS169 PG-SOT-23 BSS169 PG-SOT-23 L6327: L6906: GS-10 gs10 diode MARKING SFS | |
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BSP149 l6906
Abstract: tr d400 L6327
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BSP149 PG-SOT223 BSP149 PG-SOT223 BSP149 l6906 tr d400 L6327 | |
BSS159N
Abstract: bss159
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BSS159N OT-23 IEC61249-2-21 BSS159 BSS159 PG-SOT-23 PG-SOT-23 H6327: H6906: BSS159N | |
bsp315pContextual Info: BSP315P SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated VDS ID Continuous drain current -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated |
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BSP315P IEC61249221 VPS05163 BSP315P PG-SOT223 H6327: | |
bsl307spContextual Info: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 |
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BSL307SP L6327: 3000pcs/r. bsl307sp | |
Contextual Info: Rev 2.4 BSP318S SIPMOS Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Enhancement mode • Avalanche rated VDS Drain-Source on-state resistance RDS on Continuous drain current 60 V 0.09 Ω 2.6 A ID • Logic Level |
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BSP318S IEC61249221 VPS05163 PG-SOT223 H6327: | |
BSP129Contextual Info: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101 |
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BSP129 IEC61249221 PG-SOT223 BSP129 PG-SOT223 | |
D098Contextual Info: BSP321P SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -100 V RDS on ,max 900 mW ID -0.98 A • Normal level • Avalanche rated PG-SOT-223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 |
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BSP321P IEC61249-2-21 PG-SOT-223 H6327: D098 | |
BSP297Contextual Info: Rev. 2.2 BSP297 Ò Small-Signal-Transistor SIPMOS Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101 |
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BSP297 PG-SOT223 IEC61249221 VPS05163 BSP297 H6327: 55/150oss | |
tr d400
Abstract: D400 BSP149 d400 f
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BSP149 PG-SOT223 BSP149 PG-SOT223 tr d400 D400 d400 f | |
D19D19
Abstract: BSP171P
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BSP171P PG-SOT223 L6327: OT-223: D19D19 BSP171P |