JEDEC MO-015 BA Search Results
JEDEC MO-015 BA Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TMP139AIYAHR |
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JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 |
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SN74SSQEA32882ZALR |
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JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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SN74SSQEB32882ZALR |
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JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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SN74SSQE32882ZALR |
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JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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SN74SSQEC32882ZALR |
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JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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JEDEC MO-015 BA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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jedec mo-142 dd
Abstract: MO-142 jedec mo-142 48BA MS-016 32-PIN jedec mo-015 ba
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MO-015 28-PIN 63-BALL jedec mo-142 dd MO-142 jedec mo-142 48BA MS-016 32-PIN jedec mo-015 ba | |
JEP95
Abstract: PDIP32 PDIP-32-600
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PDIP32 JEP95: MO-015 QS-000746-HD-02 JEP95 PDIP32 PDIP-32-600 | |
jedec mo-142 dd
Abstract: MO-142 MO-183 TSOP 86 Package 40602 MO-015 jedec mo-015 ba MS-016 Packaging Diagrams soic 16 Jedec package outline
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MO-015 28-LEAD MO-183 MO-180 44-LEAD MO-142 48-LEAD jedec mo-142 dd TSOP 86 Package 40602 jedec mo-015 ba MS-016 Packaging Diagrams soic 16 Jedec package outline | |
MO-195
Abstract: BSC -23-01n15
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MO-195 64-Ball MO-195 BSC -23-01n15 | |
E16-1
Abstract: MO-092AC
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E16-1 E20-1 E24-1 E28-1 E28-2 PSC-21 E16-1 MO-092AC | |
MO-092AC
Abstract: E16-1
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E16-1 E20-1 E24-1 E28-1 E28-2 MO-092AC E16-1 | |
28 LEADLESS CHIP CARRIER DWG
Abstract: MS-009-AE
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L20-1 28 LEADLESS CHIP CARRIER DWG MS-009-AE | |
7293Contextual Info: PACKAGE DIAGRAM O U T L I N E S LEADLESS CHIP CARRIER DCN REV DESCRIPTION DATE 17 295 05 UPDATE TO STANDARDIZE DRAWING APPROVAL A E NOTES: 2. E UNLES OTHERWISE SPECIFIED; BSC - BASIC LEAD SPACING BETWEEN CENTERS. DWG # SYMBOL MIN MAX A .060 .075 A1 .050 .065 |
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L20-1 7293 | |
MO-058AB
Abstract: 18 Ld CERDIP DIMENSIONS i50015
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D16-1 M-5851 07HERWISE MO-058AB 18 Ld CERDIP DIMENSIONS i50015 | |
Contextual Info: i l DEC Publication No 9! WITH I NDEX AREA —b N ^ ~ FINISH — - loi— — \ r^h i/ 1 \ — r 4 jf' ì E1a c i _ j â ) 1 2 3 N/ Z lA (1/2 LEAD 4 PLAuES i z é z BASE METAL 4 PLACES ( P U L L L E AD) D1 D Ä D 1 LEAD At a SECTIDN z A BA^E PLANE—\ i |
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jedec ms-019
Abstract: jc 120 MS-019
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DESCRIPTION 6116
Abstract: BLVD MARK F282 0.1 J 250 MKT
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f16-1 40HDRWISD F84-3 DESCRIPTION 6116 BLVD MARK F282 0.1 J 250 MKT | |
jedec MO-036
Abstract: 16DO
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PSC-2016 jedec MO-036 16DO | |
Contextual Info: TELEFUNKEN ELECTRONIC filC D • fllEDD'ib G0Q3B72 b Ü Â L 6 6 U 2417 B _ 7v7- 05^07 mmMDBBM electronic C rM tM ■ftchnologi»* Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios Features; • Large supply voltage range |
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G0Q3B72 | |
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Contextual Info: TELEFUNKEN ELECTRONIC filC D • fi^SOa^b OOOBfibS R U 2416 B inHUlIPWl&tllXI electronic Crtttivt IfcchnotoQiw - 7 = - T 7 - O ? Monolithic Integrated Circuit Applications: AM/FM-IF-Amplifier for mains and battery operated radios |
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150-110Contextual Info: EDI8F1664C100/120/150 mo\ Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module. The module consists of four 4 32Kx8 CMOS Static RAMs in plastic small outline packages, surface mounted onto an epoxy laminate (FR-4) |
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EDI8F1664C100/120/150 64Kx16 EDI8F1664C 32Kx8 32Kx16 DQ8-DQ15) EDI8F1664C100/120/1SO EDI8F1664C100/120/150 150-110 | |
transistor 12E
Abstract: sot 23 PW1 46 OJ31 MPQ6600 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600
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MPQ6600 MPQ6100A MPQ6600A MPQ6100, PV3-25 MPQ6600, O-116 DIMENS10N-NG Y145M, transistor 12E sot 23 PW1 46 OJ31 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600 | |
CXO 049
Abstract: GX6101 CXO 043 BX61 CI043 CXO 046 ci pal 014 V/ci pal 014
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M4A3-256/128-7YC10YI CXO 049 GX6101 CXO 043 BX61 CI043 CXO 046 ci pal 014 V/ci pal 014 | |
U418B
Abstract: AM-receiver circuit u418 005 418
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U418B U418B AM-receiver circuit u418 005 418 | |
Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V |
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IR2117 5M-1982 284mm/ M0-047AC. 554S2 | |
Contextual Info: International IOR Rectifier Data Sheet No. PD-6.028C IR2111 HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V |
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IR2111 IR2111 5M-1982 M0-047AC. 554S2 | |
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
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AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 | |
100A484Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels |
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IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, T10484 100A484 | |
100A484
Abstract: 100484 Z623 I60S4 10A484
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IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, IDT10484 100A484 100484 Z623 I60S4 10A484 |