jedec 46c
Abstract: leadframe materials
Text: Process Name: Product Change Notification PCN Revision Level: 9 Last Update: 08/26/2010 Scope: Microelectronics WW, All customers that participate in the automated Microelectronics Process via the PCN Enabler using the Customer Connect interface. The goal is to meet the JEDEC guidelines as often as possible,
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200mm
300mm
jedec 46c
leadframe materials
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Untitled
Abstract: No abstract text available
Text: m EDI8F32256C 256KX32 SRAM Module Sl e c t r o n ic DESIGNS, IN C I Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and 12ns CMOS: 15,20,25, and 35ns • Individual Byte Selects • Fully Static, No Clocks
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EDI8F32256C
256KX32
EDI8F32256C
256Kx4
Fou2256C
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MN128
Abstract: jedec 46c
Text: W EDI8F32259C D l electronic designs inc» 256KX32SRAM Module 256Kx32Static RAM CMOS, H itfi Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access M emory module organized as 256K words by 32 bits. This module is
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EDI8F32259C
256KX32SRAM
256Kx32
10and
256Kx32Static
EDI8F32259C
256Kx4
72Pin
MN128
jedec 46c
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EDI8F32256C
Abstract: IxXx
Text: ^EDI EDI8F32256C 256KX32 SRAM Module ÍLECTRONIC DESIGNS, IN C I Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32256C is a high speed 8 megabit Static RAM Random Access Memory • • • module organized as 256K words by 32 bits. This module is
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EDI8F32256C
256Kx32
EDI8F32256C
256Kx4
IxXx
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F32128C ELECTRONIC D ESIGNSINCl 128KX32 SR AM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8F32128C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is
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EDI8F32128C
128KX32
EDI8F32128C
128Kx8
100ns
proF32128LP70BAC
I8F32128LP85BAC
I8F32128LP100BAC
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2u20 diode
Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors
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1-800-232-CODI
1N6003B
1N6004B
1N6005B
1N6006B
1N6007B
1N6008B
1N6009B
1N6010B
1N6011B
2u20 diode
2U39 diode
1N4C07
IN6016
IN4688
1N4C03
1N4C02
HRG1000
1N1989B
1N218
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AT93C46C
Abstract: AT93C46C-10PC AT93C46C-10PI AT93C46C-10SC AT93C46C-10SI
Text: Features • Low-Voltage and Standard-Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) • 3-W ire Serial Interface • Schm itt Trigger, Filtered Inputs for Noise Suppression • 2 MHz Clock Rate (5V) Com patibility
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AT93C46C
s-001
AT93C46C-10PC
AT93C46C-10PI
AT93C46C-10SC
AT93C46C-10SI
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a1s hb
Abstract: No abstract text available
Text: EDI8F32258C '256Kx32 SRAM Module F e a tu re s 256Kx32 Static RAM CMOS, High SpeedModule 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times
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EDI8F32258C
256Kx32
EDI8F32258C
128Kx8
ED8F32258C
a1s hb
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Untitled
Abstract: No abstract text available
Text: EDI8F32258C 1256Kx32 SRAM Module fe a tu re s 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times
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EDI8F32258C
1256Kx32
256Kx32
EDI8F32258C
128Kx8
323G114
EDBF32258C
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Untitled
Abstract: No abstract text available
Text: EDI8F32256C ^ E D I 256Kx32 SRAM Module ELECTRONIC DESIGN! N C l Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32256C is a high speed 8 megabit Static RAM Random Access Memory • module organized as 256K words by 32 bits. This module is
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256Kx32
EDI8F32256C
EDI8F32256C
256Kx4
EDI8F32256B10MZC
EDI8F32256B12MZC
EDI8F32256C15MZC
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K4B1G1646C-ZCF7
Abstract: jedec 46c DDR3-1066 K4B1G0446C-ZCF7 K4B1G0846C-ZCF7 samsung ddr3 K4B1G1646C atxp1 K4B1G0446C
Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46C 1Gb C-die DDR3 SDRAM Specification Revision 1.0 June 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4B1G04
K4B1G1646C-ZCF7
jedec 46c
DDR3-1066
K4B1G0446C-ZCF7
K4B1G0846C-ZCF7
samsung ddr3
K4B1G1646C
atxp1
K4B1G0446C
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA
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20/25/35/45/55/70ns
IDT71342SA
700mW
IDT71342LA
T71342
492-M
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Untitled
Abstract: No abstract text available
Text: CMOS SyncFIFO 256x18, 5 1 2 x 1 8 ,1 ,0 2 4 x 1 8 , 2,048x18 and 4,096x18 FEATURES: • • • • • • • • • • • • • • • • 256 x 18-bit organization array IDT72205LB 512 x 18-bit organization array (IDT72215LB) 1,024 x 18-bit organization array (IDT72225LB)
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256x18,
048x18
096x18
18-bit
IDT72205LB)
IDT72215LB)
IDT72225LB)
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jedec 46c
Abstract: DQ8-DQ11
Text: ^ E D EDI8F32259V I ELECTRONICDESIGNS,INC. 25SKx32 SRAM Module ADVANCED Features 256KX32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory The EDI8F32259V is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module
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256Kx32
EDI8F32259V
25SKx32
EDI8F32259V
MA01581
FAX508-836-4850â
jedec 46c
DQ8-DQ11
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K4B2G1646C
Abstract: k4B2G1646 128mx16 ddr3 K4B2G0846C-HCH9 K4B2G0846C-HCK0 samsung ddr3 "2Gb DDR3 SDRAM" DDR3 DIMM 240 pinout HCF8 K4B2G0446C
Text: 2Gb DDR3 SDRAM K4B2G04 08 46C 2Gb C-die DDR3 SDRAM Specification 78 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4B2G04
K4B2G1646C
k4B2G1646
128mx16 ddr3
K4B2G0846C-HCH9
K4B2G0846C-HCK0
samsung ddr3
"2Gb DDR3 SDRAM"
DDR3 DIMM 240 pinout
HCF8
K4B2G0446C
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Untitled
Abstract: No abstract text available
Text: Datasheet SHT21P Humidity and Temperature Sensor Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable • • Product Summary SHT21P, the new humidity and temperature sensor of
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SHT21P
SHT21P,
120Hz,
CH-8712
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SHT21P
Abstract: SHT21 SHT1x i2c THB 2411
Text: Datasheet SHT21P Humidity and Temperature Sensor • • Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT21P, the new humidity and temperature sensor of
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SHT21P
SHT21P,
SHT21P
SHT21
SHT1x i2c
THB 2411
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Untitled
Abstract: No abstract text available
Text: Datasheet SHT20P Humidity and Temperature Sensor IC • • Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT20P, the new humidity and temperature sensor of
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SHT20P
SHT20P,
120Hz,
CH-8712
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Untitled
Abstract: No abstract text available
Text: Datasheet SHT21P Humidity and Temperature Sensor IC • • Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT21P, the new humidity and temperature sensor of
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SHT21P
SHT21P,
120Hz,
CH-8712
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PDF
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SHT20
Abstract: SHT20P SHT20 QFN SHT20 version 2 STAEFA RH 2000
Text: Datasheet SHT20P Humidity and Temperature Sensor IC Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable • • Product Summary SHT20P, the new humidity and temperature sensor of
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SHT20P
SHT20P,
CH-8712
SHT20
SHT20P
SHT20 QFN
SHT20 version 2
STAEFA RH 2000
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Untitled
Abstract: No abstract text available
Text: GENL IN S T R / asE POüJER » • 3 a ci Q i 3 7 Q Q a a a ib i ■ r - o l - 1 3 1 N 4 0 0 1 P T H R U 1 N 4 0 0 7 P MINIATURE PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters
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Untitled
Abstract: No abstract text available
Text: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB / SMC FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection
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SK42C
SK420C
DO-214AB
2002/95/EC
2002/96/EC
J-STD-020,
DO-214AB
MIL-STD-750
J-STD-002
JESD22-B102rs
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Untitled
Abstract: No abstract text available
Text: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB / SMC FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection
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SK42C
SK420C
DO-214AB
2002/95/EC
2002/96/EC
J-STD-020,
DO-214AB
MIL-STD-750
J-STD-002
JESD22-B102.
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Untitled
Abstract: No abstract text available
Text: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB SMC FEATURES Low profile package Ideal for automated placement Low power losses, high efficiency High surge current capability Guarding for overvoltage protection
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SK42C
SK420C
DO-214AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
Jan-12
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