JE350 TRANSISTOR Search Results

MJE340

Abstract: transformerless mje340 transistor MJE340 b c e MJE350 MJE-350
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE340 HIGH COLLECTOR-EMITTER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMERLESS, LINE OPERATED EQUIPMENT • C om plem ent to M JE350 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage

JE350

Abstract: je350 transistor je-350 MJE350 MOTOROLA
Contextual Info: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA M JE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . d e sig ned for use in lin e -o p e ra te d ap p lica tio n s such as lo w power, lin e -o p e ra te d

JE350

Abstract: je350 transistor je-350
Contextual Info: rzz SGS-THOMSON Ä T# m je 34o M J E 350 « « L E M « ! COMPLEMETARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES A PP LICA TIO N S • LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT D ESCRIP TIO N The MJE340 is a silicon epitaxial planar NPN

JE340

Contextual Info: r z 7 SGS-THOMSON ^7# MJE340/T/SGS340 MJ E350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The M JE340, MJE340T, SGS340 are silicon e p i­ taxial planar NPN transistors intended for use in m edium power linear and sw itching applications. They are respectively m ounted in TO-125, TO-220

MJE240

Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
Contextual Info: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250

JE350

Abstract: JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g
Contextual Info: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −

transistor mje29

Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
Contextual Info: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific

JE370

Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Contextual Info: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176

je350g

Contextual Info: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

Contextual Info: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −

JE350

Contextual Info: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

JE350

Contextual Info: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •

JE350

Abstract: je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN
Contextual Info: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −

rtd 2660

Abstract: RPX 10 PLC programming GK transistor 72 SK 10 BAT 065 je350 transistor kl1 TRANSISTOR JE350 resistor 400ohm VOLTAGE LEVEL RELAY SJ 195
Contextual Info: /= T ^7 # I S G S -T H O M S O N KÆO [^@[l[L[l©Tr[^ Q [RDD©S L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIM IN ARY DATA I • ■ . . ■ . ■ ■ . ■ ■ ■ M O N O C H IP S ILIC O N SLIC S U IT A B LE FOR P U B LIC /P R IV A T E A P P LIC A T IO N S

JE350

Abstract: TCA3383A TCA3383 je350 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TCA 3383 A/B TELEPHONE SET TRANSMISSION CIRCUIT The T C A 3 3 8 3 A and T C A 3 3 8 3 B telep ho n e set tra nsm issio n circu its replace the hybrid tra n sfo rm e r in a telephone set, inclu de tra n s m it and receive a m p lifie rs and pro vide line m a tching and sidetone cancellation

return to zero decoder

Abstract: UAA 146 ZA 398 SGS Relay cf 318 gst 102 ptc resistor THERMAL PROTECTION L3037 L3037FN L3037QN PLCC44
Contextual Info: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT P R E L IM IN A R Y D A T A • MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS . IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION ■ SOFT BATTERY REVERSAL WITH PROGRAMMABLETRANSITION TIME (3 to 100ms

JE350

Abstract: je350 transistor
Contextual Info: M MOTOROLA MC34016 Advance Information Cordless Universal Telephone Interface The MC34016 is a telephone line interface meant for use in cordless tele­ phone base stations for CTO, CT1, CT2 and DECT. The circuit forms the interlace towards the telephone line and performs all speech and line inter­

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

UAA 146

Abstract: L3037 L3037FN L3037QN PLCC44 PQFP44 PTC 880 st diode cross reference Relay cf 318 0.8
Contextual Info: SGS-THOMSON L3037 [M g [M & i(g T I[S (Q M (§ i SUBSCRIBER LINE INTERFACE CIRCUIT PR ELIM IN A R Y DATA . . • . ■ ■ ■ ■ ■ ■ . ■ ■ MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor