JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Search Results
JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TK2R4A08QM |
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MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS |
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XPN1300ANC |
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N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) |
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TK190U65Z |
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MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
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TK7R0E08QM |
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MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB |
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SSM6K517NU |
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MOSFET, N-ch, 30 V, 6 A, 0.0391 Ohm@4.5V, UDFN6B |
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JAN P-CHANNEL MOSFET TRANSISTOR LOW POWER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MOSFET TRANSISTOR SMD MARKING CODE 545
Abstract: 2N7236 equivalent number of smd transistor of 1448 2N7236 JANTX smd diode code BL p-channel mosfet BL
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2N7236 MIL-PRF-19500/595 2N7236 O-254AA MIL-PRF-19500/595. T4-LDS-0061, MOSFET TRANSISTOR SMD MARKING CODE 545 equivalent number of smd transistor of 1448 2N7236 JANTX smd diode code BL p-channel mosfet BL | |
DD 127 D transistor
Abstract: 2N6849
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2N6849 MIL-PRF-19500/564 2N6849 O-205AF T4-LDS-0009, DD 127 D transistor | |
Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E |
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RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp | |
Contextual Info: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the |
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RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz | |
Contextual Info: < Silicon RF Power Modules > RA60H4452M1A RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H4452M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 440- to 520-MHz range. |
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RA60H4452M1A 440-520MHz RA60H4452M1A 60-watt 520-MHz | |
Igg22Contextual Info: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range. |
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RA60H3847M1A 378-470MHz RA60H3847M1A 60-watt 470-MHz Igg22 | |
RA60H1317M-101
Abstract: RA60H1317M RA60H1317M1
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RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz RA60H1317M-101 RA60H1317M1 | |
RA30H4047M
Abstract: RA30H gp 532 RA30H4047M-101
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RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H gp 532 RA30H4047M-101 | |
50ND2
Abstract: RA45H4047M RA45H4047M-101
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RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz 50ND2 RA45H4047M-101 | |
RA45H4452M
Abstract: RA45H4452M-101 transistor marking zg
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RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-101 transistor marking zg | |
RA13H8891MA-101
Abstract: RA13H8891MA
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RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-101 | |
RA03M8894M
Abstract: RA03M8894M-101
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RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-101 | |
RA07M0608M-101
Abstract: RA07M0608M Pin-30mW RA07M0608
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RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608 | |
RA08N1317M
Abstract: RA08N1317M-101 RA08N1317
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RA08N1317M 135-175MHz RA08N1317M 175-MHz RA08N1317M-101 RA08N1317 | |
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RA07N4452M
Abstract: RF MOSFET MODULE RA07N4452
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RA07N4452M 440-520MHz RA07N4452M 520-MHz RF MOSFET MODULE RA07N4452 | |
RA30H0608M
Abstract: RA30H0608M-101
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RA30H0608M 66-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-101 | |
mosfet marking 12W
Abstract: RA07H0608M RA07H0608M-101 transistor marking code 12W 30mW transistor
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RA07H0608M 68-88MHz RA07H0608M 88-MHz mosfet marking 12W RA07H0608M-101 transistor marking code 12W 30mW transistor | |
RA07N4047M-101
Abstract: RA07N4047M
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RA07N4047M 400-470MHz RA07N4047M 470-MHz RA07N4047M-101 | |
MOSFET Module
Abstract: RA30H2127M RA30H2127M-101
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RA30H2127M 210-270MHz RA30H2127M 30-watt 270-MHz MOSFET Module RA30H2127M-101 | |
RA07M3843
Abstract: RA07M3843M RA07M3843M-101 4 channel rf module
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RA07M3843M 378-430MHz RA07M3843M 430-MHz RA07M3843 RA07M3843M-101 4 channel rf module | |
RA13H4452M
Abstract: RA13H4452M-101 transistor 60 13w
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RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101 transistor 60 13w | |
RF MOSFET MODULE
Abstract: RA30H1721M RA30H1721M-101
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RA30H1721M 175-215MHz RA30H1721M 30-watt 215-MHz RF MOSFET MODULE RA30H1721M-101 | |
transistor marking code H11S
Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
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RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz transistor marking code H11S MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101 | |
RA07H4047M
Abstract: RA07H4047M-101
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RA07H4047M 400-470MHz RA07H4047M 470-MHz RA07H4047M-101 |