J6 TRANSISTOR Search Results
J6 TRANSISTOR Datasheets Context Search
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EM- 546 motor
Abstract: TACHOMETER Magnetic Tachometer
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Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage |
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OT-23 S9014LT1 S9015LT1 30MHz | |
S9014
Abstract: transistor SOT23 J6
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OT-23 S9014 OT-23 S9015 30MHz S9014 transistor SOT23 J6 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter |
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OT-23 S9014 OT-23 S9015 30MHz | |
transistor SOT23 J6
Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
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OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 | |
transistor S9014Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter |
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OT-23 S9014 OT-23 S9015 30MHz transistor S9014 | |
Contrans V17131
Abstract: contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1
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V17131-16 Contrans V17131 contrans I contrans J1 TRANSISTOR V17131-16 B10K transistor BA 14 DIN19234 Contrans V17131-53 10KJ1 | |
transistor SOT23 J6
Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
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S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23 | |
bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
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00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202 | |
Contextual Info: DMA56604 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: J6 Basic Part Number |
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DMA56604 UL-94 DRA2114Y DMA566040R | |
Contextual Info: SIEMENS BUZ 308 SIPMOS Power Transistor • N channel • Enhancement mode 12 • Avalanche-rated V»;05'J6 i Pin 1 Pin 2 G Type BUZ 308 Vbs 800 V 2.6 A ^DS on 4 fl Pin 3 s D Package Ordering Code TO-218AA C67078-S3109-A2 Maximum Ratings Parameter Symbol |
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O-218AA C67078-S3109-A2 O-218 | |
2SB1335AContextual Info: h "7 O 2SB1335A /Transistors C R 4 3 3 5 A W w w # ^ * £ * * ' > 7 ^ : / V - : ^ P N P y ÿ i i > h 7 > y 2 * Epitaxial Planar PNP Silicon Transistor Fraq. Power Amp. > i /Dim ensions Unit : mm • ttft 1 ) VcE (sat) A'*j6 l ' 0 _ io .n l“ ; VcE (s a t)= —0.5V (Typ.) |
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2SB1335A O-220FP SC-67 2SB1335A | |
Contextual Info: TOSHIBA MG30J6ES50 TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M G 3 G J6 E S 5 G HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The Electrodes are Isolated from Case. High Input Impedance. 6 lOBTs Built Into 1 Package, Enhancement- Mode. |
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MG30J6ES50 --30A, | |
Contextual Info: .%3:' ,QVWDOODWLRQ DQG 2SHUDWLRQ 0DQXDO 5HY $ 6XSSOHPHQWDO ,QIRUPDWLRQ &KDQJHV WR :LULQJ 6HFWLRQ ,* RQ 3DJH G. Remote Start/Stop Switch Connections The control is supplied with a prewired Start/Stop Switch with a normally open "NO" stop contact. Jumper J6 is factory set to the "NO" position. |
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KBPW-240D A40360) A40194) | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M |
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WBFBP-03B WBFBP-03B S9014M S9015M | |
j6 transistor
Abstract: transistor j6 marking J6 transistors marking J6
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WBFBP-03B WBFBP-03B TP9014NND03 TP9015NND03 TP9014NND03 j6 transistor transistor j6 marking J6 transistors marking J6 | |
202319AContextual Info: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family |
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EV183 AAT2822/2823/2824/2825 AAT282x AAT2822, AAT2823, AAT2824, AAT2825) AAT282x-1 202319A | |
Contextual Info: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz. |
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bbS3T31 LJE42002T | |
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M |
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WBFBP-03B WBFBP-03B S9014M S9015M | |
S9015
Abstract: S9015M S9014M
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WBFBP-03B WBFBP-03B S9014M S9015M S9015 S9015M S9014M | |
MIC79110
Abstract: 030405 CRCW06034021FRT1 GRM188R60J475KE19D GRM21BR61C225KA88L MIC79110BML MLF-10 CRCW06031001FRT1 CRCW06031002FRT1
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MIC79110 550mV MIC79110 M9999-030405 030405 CRCW06034021FRT1 GRM188R60J475KE19D GRM21BR61C225KA88L MIC79110BML MLF-10 CRCW06031001FRT1 CRCW06031002FRT1 | |
AN1370
Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
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LM5034EVAL LM5034 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. AN-1370 AN1370 AN-1370 si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration | |
sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
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OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 |