J31 TRANSISTOR Search Results

Contextual Info: bbS3*J31 0015515 “=! ObE D N AMER PHILIPS/DISCRETE BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 variant, especially suitable for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.

Contextual Info: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

BUK456

Abstract: C055 T0220AB 7ts transistor
Contextual Info: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE b^E » • bb53*J31 0030363 bS3 Philips Components BGY113A/113B Datasheet status P r e lim in a r y s p e c ific a tio n date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in

ferrite beat

Abstract: ferrite 4312 Scans-004952 MLAP GG267
Contextual Info: N AMER PHILIPS/DISCRETE b 'ìE bb53=J31 0 Q 2 6 7 6 S D G 7T * A P X BLT93/SL A UHF POWER TRANSISTOR NPN silicon planar epitaxial tran sisto r p rim a rily intended fo r use in hand-held radio stations in the 90 0 M Hz co m m u n ica tio n s band. T his device has been designed sp e cifica lly fo r class-B operation.

J334 transistor

Abstract: j327 j350 1t4t transistor j349 transistor J333 j327 transistor j350 TRANSISTOR transistor j326 j329
Contextual Info: Flat Panel Interlace Examples Flat Panel Interface Examples This section includes schematic examples showing how to connect the 65525 to various flat panel displays. Monochrome Panels 1 2) 3) 4) 5) Mfr Part Number Epson Citizen Sharp Sanyo Hitachi EG-9005F-LS

J32C

Abstract: J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c MJD32 J31C MARKING
Contextual Info: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1

Contextual Info: ObE D N AMER PHILIPS/DISCRETE bbSS^l ODlM^a? S • LBE2005Q LCE2005Q MAINTENANCE TYPE for new design use LBE/LCE2003S J T - S i r 05" MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

LBE2005Q

Abstract: LCE2005Q J31 transistor
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • 1^53=131 □DIM'IS? S ■ M A IN T E N A N C E TYPE LBE2005Q LCE2005Q I for new design use LBE/LCE2003S T-32r05" . MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: £=J S G S -T H O M S O N A T /. M»i[LBCT@l[] S_MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • RUGGEDIZED VSWR 20:1 . INTERNAL INPUT/OUTPUT MATCHING B LOW THERMAL RESISTANCE . METAL/CERAMIC HERMETIC PACKAGE

BQX54

Abstract: BCX56 BCX54 71A marking BCX51 BCX52 BCX53 BCX54-10 BCX54-16 BCX55
Contextual Info: • bhS3^31 0024tD'ì 1T3 HiAPX N AUER PHILIPS/DISCRETE BCX54 BCX55 BCX56 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages

L7E transistor

Abstract: BF820 BF821 BF822 BF823
Contextual Info: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N

Contextual Info: • bb53T31 D0555Qb MTD H A P X N AUER PHILIPS/DISCRETE BSP120 b7E » N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and

Contextual Info: • bbS3c13]i QQ245bl 4Tb H A P X N AUER PH ILIPS/DISCR ETE BCW29 BCW30 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

Contextual Info: BSP126 JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a miniature SO T223 envelope and designed for use as a line interrupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.

BDT95

Contextual Info: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.

TIP-33

Abstract: T1P33 TIP33 TIP33A TIP33B TIP33C TIP34 TIP34A TIP34B TIP34C
Contextual Info: Jv TIP33; A; B; C _ SILICON POWER TRANSISTORS N-P-N epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complements are

sot440

Abstract: MLC092
Contextual Info: Philips Semiconductors Product specification . NPN microwave power transistors FEATURES PTB32001X; PTB32003X; ’ _ ’ PTB32005X PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: • bbSBTBl 00E4S43 460 ■ A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B: 61C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.

907 TRANSISTOR smd

Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
Contextual Info: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in

Contextual Info: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

bd679

Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

D434

Abstract: BD43b 440 transistors
Contextual Info: P h ilip s S em icon ducto rs P relim inary sp e cifica tio n Silicon epitaxial-base transistors DESCRIPTION QUICK REFERENCE DATA PNP transistors in a TO-126 SOT32 plastic envelope, intended for use in complementary output stages of audio amplifiers up to