J1J2 Search Results

200177D

Abstract: AS183-92LF
Contextual Info: DATA SHEET AS183-92/AS183-92LF: 300 kHz-2.5 GHz pHEMT GaAs SPDT Switch Applications • General purpose medium-power switches in telecommunication applications • Transmit/receive switches in 802.11 b/g WLAN Bluetooth systems Features • IP1dB: +30 dBm typical @ 3 V

Contextual Info: PROPOSED RFPA2016 RFPA2016 3-Stage Power Amplifier, 1W 700MHz to 2700MHz GND 26 25 24 23 DET_IN RFOUT3/Vcc3 27 GND GND 28 RFOUT3/Vcc3 GND The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias

NONLINEAR MODEL LDMOS

Contextual Info: RFSA2013 RFSA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR MODE VDD VC GND Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm 16 15 14 13 Features Broadband 50MHz to 4000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical 

SSOP-20

Abstract: AA260-85 AA260-85LF
Contextual Info: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features ● 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a

4235

Abstract: NN12 P35-4235-000-200
Contextual Info: P35-4235-000-200 GaAs MMIC SPST ABSORPTIVE SWITCH, DC - 20GHz Features • • • • • Broadband Low insertion loss 1.8dB typ at 18GHz Fast switching speed High isolation 50dB at 18GHz Through GaAs Vias for improved performance Description The P35-4235-000-200 is a high performance Gallium Arsenide monolithic single pole single throw broadband RF

pt1174

Abstract: samwha capacitor transistor c310 SFOP5845 TT 2222 npn NPN SOT23 transistor 683 ZHCS1000 samwha capacitor part numbers 1N4148
Contextual Info: ZXSC310EV LED DRIVER EVALUATION BOARD ZXSC310EV USER GUIDE INTRODUCTION The ZXSC310 is single or multi cell LED driver designed for LCD backlighting and other LED applications. The device features a shutdown control, resulting in a standby current of less than 5␮A. The output can drive

NJM2217

Abstract: NJM2217L NJM2217M SDIP22 SW11 P13TP
Contextual Info: NJM2217 AFC 付映像信号加算用 IC • 概 要 NJM2217 は，映像信号に文字，背景信号を重畳する機能を有し， 同期分離回路，垂直同期再生回路，ビデオスイッチおよび AFC 回路 から構成されています。

dy 255

Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555
Contextual Info: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the

ITT130AK

Abstract: SC74 5310 VA MARKING
Contextual Info: SPST High Isolation, Absorptive Switch Negative or Positive Control ITT130AK FEATURES • • • • • High isolation 39 dB at 2.5 GHz Miniature, SOT6 package Reflective open port (J1) Non-Reflective port (J2) Self-Aligned MSAG Process TRUTH TABLE (Negative Control)

Contextual Info: Wireless Products Electromechanical RF Switches Active Components Passive Components RF Radiation Safety Products Power Meters/Monitors Main Menu Transfer Switches — DPDT Series 139 DPDT / DC-1 GHz BNC, TNC, N RF PERFORMANCE Frequency Range GHz DC-1 VSWR (Max)

ITT002AB

Contextual Info: SPDT Non-Reflective Switch - High Isolation Negative or Positive Control ITT002AB FEATURES • • • • • • • • SOIC-8 package Non-Reflective High Isolation 40 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors

Contextual Info: GaAs 1C SPDT Reflective Switch Positive Control DC-2.5 GHz EBAlpha A S373-12 Features SOIC-8 • Low Insertion Loss <0.5 dB @ 0.9 GHz PIN 8 «— ^ RII f « ■ Complementary Positive Control Voltage ■ Positive Voltage Supply (+3 to +5 V) PIN 1 INDICATOR -

SSOP8 Package

Contextual Info: GaAs MMIC Two Watt High Linearity SPDT Switch in SSOP8 Package DC-2.0 GHz ED A lpha AS359-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control

Contextual Info: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EH A lpha AS10&-59 Features • Low Loss 0.5 dB @ 900 MHz ■ Dual Positive Control Logic (0/+3V or 0/+5V) ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost

Contextual Info: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability

S116

Abstract: actaa
Contextual Info: GaAs MMIC 2 Watt High Linearity Cellular SPDT Switch DC-2000 MHz ^ ^ 3 A lpha { gmi'nijijiiiiiiii it m in i m m iimmim ra a ^ g aCTaa AS116-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption

Contextual Info: TRANSFER SWITCHES Advanced Gontrol Components The XF series of PIN diode transfer switches span the frequency range of 10MHz to 18GHz. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to high-performance broadband.

Contextual Info: 1CT : 1CT J1 TD+ J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 3 -P 7 -P 6 : (J3-J6 ) (P 1 -P 4 -P 5 -P 2 ) : (J1-J2 ) 1 CT 1 CT 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: (P 3 -P 6 ) (J1-J2 ) 400uH 400uH MIN.

Contextual Info: GaAs MMIC SPST FET Switch Chip EUAlpha With Integral Driver DC-6 GHz AK006L1-00, AK006M1-00, AK006R1-00 Features • Multiple Use Options: Low Loss Reflective; High Isolation Non-Reflective; High Isolation Reflective ■ Low D.C. Power Consumption - 2 0 mW

Contextual Info: DATA SHEET SKYA21001: 20 MHz to 3.0 GHz SPDT Switch Automotive Applications • Infotainment V2 J3  Automated toll systems  Garage door opener J1  802.11 b/g/n WLAN, Bluetooth systems  Wireless control systems  Outdoor lighting control J2 V1

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC, RoHS 2002/95/EC j ELECTRICAL CHARACTERISTICS 1.0 TURNS RAT IO : P 3 -P 5 -P 6 P 1 -P 4 -P 2 )

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC ELECTRICA L SPECIFICATIONS: 1 .0 2 .0 3 .0 4 .0 5 .0 TURNS RATIO: INDUCTANCE :

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS V ELECTRICAL CHARACTERISTICS @ 2 5 ' C TURNS RATIO: 1CT 1CT P 1 -P 2 -P 3 : J1-J2 )

Contextual Info: lOOOpFj 2 K V N D T ES 1C T I 1C T 1.0 C O M P L IE S WITH THE EUROPEAN D I R E C T I V E 2 0 0 2 / 9 5 / E C , C A L LIN G FDR THE E L IM IN A T IO N OF LE A D AND EITHER HAZARDOUS S U B S T A N C E S FROM E L E C T R O N IC PRODUCTS, 2.0 UNUSED PIN P7 I S OMITTED,