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    SOURIAU-SUNBANK JBXER1J10MSSDPR

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    J10MS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì


    OCR Scan     		IRF530NS) IRF530NL) PD-91352A IRF530NS/L PDF

    IRLU

    Abstract: IRL530N
    Text: PD -9 .1 6 0 7 A In te rn a tio n a l IOR Rectifier IRLR/U3410 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3410 • Straight Lead (IRLU3410) • Advanced Process Technology • Fast Switching


    OCR Scan     		IRLR3410) IRLU3410) IRLR/U3410 IRLU IRL530N PDF

    DIODE D3S 5D

    Abstract: No abstract text available
    Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A


    OCR Scan     		IRFIZ34E DIODE D3S 5D PDF

    C541 DIODE

    Abstract: C540 DIODE Diode C541 TO-220 IRL3705N IRL3705N MARKING C541
    Text: P D - 9 .1 3 7 0 C International X03R. Rectifier IRL3705N H E X F E T P o w er M O S F E T • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		IRL3705N O-220 j10ms C-543 C541 DIODE C540 DIODE Diode C541 TO-220 IRL3705N IRL3705N MARKING C541 PDF

    Untitled

    Abstract: No abstract text available
    Text: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		IRF2807S) IRF2807L) PDF

    DIODE D3S 5D

    Abstract: diode D3s IRFZ3
    Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A


    OCR Scan     		IRFIZ34E DIODE D3S 5D diode D3s IRFZ3 PDF

    gs 1117 ax

    Abstract: W923
    Text: PD - 9.1658A International lO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A


    OCR Scan     		IRFR9214) IRFU9214) IRFR/U9214 gs 1117 ax W923 PDF

    Z46N

    Abstract: No abstract text available
    Text: PD - 9.1305A International IQR Rectifier IRFZ46NS/L HEXFET Power M O SFET • Advanced Process Technology • Surface Mount IRFZ46NS • Low-profile through-hole (IRFZ46NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 5 5 V


    OCR Scan     		IRFZ46NS) IRFZ46NL) IRFZ46NS/L Z46N PDF

    international rectifier NE 22

    Abstract: IRF9520N equivalent 40a 15v diode
    Text: P D - 9.1527 International IQ R Rectifier IRFI9520N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated


    OCR Scan     		IRFI9520N O-220 international rectifier NE 22 IRF9520N equivalent 40a 15v diode PDF