IXYN100N120C3 Search Results
IXYN100N120C3 Price and Stock
IXYS Corporation IXYN100N120C3H1IGBT MOD 1200V 134A 690W SOT227B |
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IXYN100N120C3H1 | Tube | 145 | 1 |
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IXYN100N120C3H1 | Tube | 300 |
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IXYN100N120C3H1 | 90 |
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IXYS Corporation IXYN100N120C3IGBT MOD 1200V 152A 830W SOT227B |
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IXYN100N120C3 | 89 |
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Littelfuse Inc IXYN100N120C3Disc Igbt Xpt-Genx3 Sot-227B(Mini/ Tube |Littelfuse IXYN100N120C3 |
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IXYN100N120C3 | Bulk | 300 |
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Littelfuse Inc IXYN100N120C3H1Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN100N120C3H1 |
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IXYN100N120C3H1 | Bulk | 300 |
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Avnet Integrated IXYN100N120C3H1IGBT Module Single 134 A 35 V 690 W 150 C SOT227B (Alt: IXSIXYN100N120C3H1) |
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IXYN100N120C3H1 | 143 Weeks | 10 |
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IXYN100N120C3 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IXYN100N120C3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 152A SOT-227B | Original | |||
IXYN100N120C3H1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 134A SOT-227B | Original |
IXYN100N120C3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ |
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IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3 | |
Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 86A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXYN100N120C3 110ns OT-227B, E153432 100N120C3 | |
Contextual Info: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
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IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 | |
iXYN100N120C3H1
Abstract: ixyn100n120c3
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IXYN100N120C3H1 IC110 110ns IF110 OT-227B, E153432 100N120C3 iXYN100N120C3H1 ixyn100n120c3 | |
IXYN100N120C3H1Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1 | |
IXYN100N120C3
Abstract: 100N120 100N120C3
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IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3 IXYN100N120C3 100N120 | |
IXYS CORPORATION
Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
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DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ |