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    IXYB82N120C3H1 Price and Stock

    IXYS Corporation IXYB82N120C3H1

    IGBT 1200V 164A 1040W PLUS264
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    DigiKey IXYB82N120C3H1 Tube 300 300
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    Mouser Electronics IXYB82N120C3H1
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    Newark IXYB82N120C3H1 Bulk 11 1
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    Future Electronics IXYB82N120C3H1 Tube 300
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    TME IXYB82N120C3H1 1
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    IXYB82N120C3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYB82N120C3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 164A 1040W PLUS264 Original PDF

    IXYB82N120C3H1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYB82N120C3H1 IC110 PLUS264TM IF110

    IXYB82N120

    Abstract: 82N120C3 IXYB82N120C3H1
    Text: IXYB82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYB82N120C3H1 IC110 PLUS264TM IF110 82N120C3 IXYB82N120 IXYB82N120C3H1

    Untitled

    Abstract: No abstract text available
    Text: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYB82N120C3H1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns PLUS264TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXYB82N120C3H1 PLUS264TM IF110 82N120C3