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IXTT16N10D2 Price and Stock

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IXYS Corporation IXTT16N10D2 MOSFET N-CH 100V 16A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT16N10D2	Tube			300	1 - 10 - 100 - 1000 $10.58217 10000 $10.58217	Buy Now
TME	IXTT16N10D2				1	1 $14.53 10 $11.48 100 $10.35 1000 $10.35 10000 $10.35	Get Quote
Littelfuse Inc IXTT16N10D2 Mosfet, N-Ch, 100V, 16A, 175Deg C, 830W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:- Rohs Compliant: Yes \|Littelfuse IXTT16N10D2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTT16N10D2	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXTT16N10D2 MOSFET DIS.16A 100V N-CH TO268(D3PAK) DEPLETION SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTT16N10D2					1 $14.29124 10 $14.29124 100 $13.3563 1000 $13.3563 10000 $13.3563	Get Quote

IXTT16N10D2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTT16N10D2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 16A TO-268		Original	PDF

IXTT16N10D2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTH16N10D2 Abstract: IXTT16N10D2 16N10 Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTH16N10D2 IXTT16N10D2 O-247 O-247) O-268 100ms 16N10D2 IXTH16N10D2 IXTT16N10D2 16N10
Untitled Abstract: No abstract text available Text: IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V	Original	PDF	IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2
IXTH16N10D2 Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A
IXTA02N100D2 Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .	Original	PDF	AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2