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    IXTQ14N60P Search Results

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    IXTQ14N60P Price and Stock

    IXYS Corporation IXTQ14N60P

    MOSFET N-CH 600V 14A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ14N60P Tube 300 1
    • 1 $2.47
    • 10 $2.47
    • 100 $2.47
    • 1000 $2.47
    • 10000 $2.401
    		Buy Now
    Mouser Electronics IXTQ14N60P 294
    • 1 $5.16
    • 10 $3.99
    • 100 $3.39
    • 1000 $2.46
    • 10000 $2.4
    		Buy Now
    Future Electronics IXTQ14N60P Tube 24 Weeks 300
    • 1 -
    • 10 -
    • 100 $2.81
    • 1000 $2.81
    • 10000 $2.81
    		Buy Now
    TTI IXTQ14N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.54
    • 10000 $2.34
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    TME IXTQ14N60P 1
    • 1 $3.99
    • 10 $3.17
    • 100 $2.85
    • 1000 $2.85
    • 10000 $2.85
    		Get Quote

    Littelfuse Inc IXTQ14N60P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tube |Littelfuse IXTQ14N60P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTQ14N60P Bulk 300
    • 1 -
    • 10 -
    • 100 $3.42
    • 1000 $2.75
    • 10000 $2.56
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    IXTQ14N60P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ14N60P IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF
    IXTQ14N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-3P Original PDF

    IXTQ14N60P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS ID25 IXTA14N60P IXTP14N60P IXTQ14N60P = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 IXTA14N60P 14N60P 12-22-08-G PDF

    14n60

    Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P
    Text: IXTA14N60P IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 062ombs IXTA14N60P 14N60P 14n60 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTP14N60P IXTQ14N60P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF