IXTH22P20 Search Results

Contextual Info: IXTH22P20 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)

LHi 978

Abstract: IXTH22P15 wabash Mosfet K 135 To3 IXTH22P20 IXTM22P15 IXTM22P20 TO-220 JEDEC XTH22P20 22p20
Contextual Info: I X Y S IDE CORP D 1 / 4 t .f lt .s a t . 5 I _ T ~ - 3 T'-JLg' □ IXYS P-CHANNEL MOSFETS IXTH22P20/ 15 IXTM22P20, 15 M A X IM U M RATING S Parameter Sym. XTH22P20 XTM22P20 IXTH22P15 IXTM22P15 Unit* Drain-Source Voltage 1) Vd s s 200 150 Vdc Drain-Gate Voltage (R q s = 1-OMfl) (1)

IRF250

Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­

IXTH13P20

Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­