IXTE12N
Abstract: No abstract text available
Text: I 1ÔE D X Y S CORP • MböbESb 0G00b33 H □ IX Y S IXTE12N 50X4 MAXIMUM RATINGS PER DEVICE Drain-Source Voltage (1) Drain-Gate Voltage (R q s = I.OMft) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25<!C)
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0G00b33
IXTE12N
IXTE12N50X4
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f g megamos
Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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ofMIL-S-19500
MIL-M-38510.
f g megamos
megamos
megamos 48
TO220H
ID 48 Megamos
megamos 13
IXGE
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f g megamos
Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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fit55t
Q000563
f g megamos
megamos 13
megamos
IXGE75N100Z
ID 48 Megamos
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