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    IXTB30N100L Search Results

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    IXTB30N100L Price and Stock

    Littelfuse Inc IXTB30N100L

    MOSFET N-CH 1000V 30A PLUS264
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    DigiKey IXTB30N100L Tube 300
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    Newark IXTB30N100L Bulk 300
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    IXYS Corporation IXTB30N100L

    MOSFETs 30 Amps 1000V
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    Mouser Electronics IXTB30N100L
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    Future Electronics IXTB30N100L Tube 300
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    TTI IXTB30N100L Tube 300
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    TME IXTB30N100L 1
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    IXTB30N100L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTB30N100L IXYS Power MOSFETs with Extended FBSOA Original PDF

    IXTB30N100L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTB30N100L PLUS264TM 30N100L 11-27-12-B

    IXTB30N100L

    Abstract: t30n100l
    Text: Linear Power MOSFET IXTB30N100L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


    Original     		PDF IXTB30N100L 264TM 30N100L 5-07-A IXTB30N100L t30n100l

    30n100

    Abstract: IXTB30N100L 30n10
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on = = ≤ 1000V 30A Ω 450mΩ N-Channel Enhancement Mode Avalanche Rated PLUS264TM G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTB30N100L PLUS264TM 30N100L 5-07-A 30n100 IXTB30N100L 30n10

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTB30N100L RDS on = = ≤ 1000V 30A Ω 450mΩ N-Channel Enhancement Mode Avalanche Rated PLUS264TM Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTB30N100L PLUS264TM 30N100L 5-07-A

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original     		PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L