IXTA2N100 Search Results
IXTA2N100 Price and Stock
IXYS Corporation IXTA2N100MOSFET N-CH 1000V 2A TO263 |
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IXTA2N100 | Tube | 50 |
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IXTA2N100 |
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Littelfuse Inc IXTA2N100PMOSFET N-CH 1000V 2A TO263 |
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IXTA2N100P | Tube | 300 |
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IXTA2N100P | Bulk | 300 |
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IXYS Corporation IXTA2N100-TRLMOSFET N-CH TO263 |
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IXTA2N100-TRL | Reel |
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Littelfuse Inc IXTA2N100P-TRLMOSFET N-CH 1000V 2A TO263 |
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IXTA2N100P-TRL | Reel | 800 |
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IXTA2N100P-TRL | Reel | 800 |
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IXYS Corporation IXTA2N100PMOSFETs 2 Amps 1000V 7.5 Rds |
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IXTA2N100P |
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IXTA2N100P | 293 | 26 |
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IXTA2N100P | Tube | 300 |
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IXTA2N100P | 1 |
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IXTA2N100 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IXTA2N100 |
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1000V high voltage MOSFET | Original | |||
IXTA2N100P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-263 | Original | |||
IXTA2N100SN |
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Transistor Mosfet N-CH 1000V 2A 3TO-263 AA | Original |
IXTA2N100 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXTP2N100
Abstract: 2N100 IXTA2N100
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IXTA2N100 IXTP2N100 O-263 2N100 3X-G68 IXTP2N100 IXTA2N100 | |
Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25 |
OCR Scan |
IXTA2N100 IXTP2N100 Cto150 O-263 O-22QAB 1999IXYS C2-76 C2-77 | |
Contextual Info: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P | |
IXTP2N100P
Abstract: 2N100P IXTA2N100P IXTP2N100
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IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100 | |
Contextual Info: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A | |
Contextual Info: High Voltage MOSFET VDSS ID25 IXTA2N100 IXTP2N100 RDS on = 1000V = 2A Ω ≤ 7Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 |
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IXTA2N100 IXTP2N100 O-263 2N100 3X-G68 | |
Irfp250 irfp460
Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
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OCR Scan |
O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 | |
MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
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O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640 | |
2N100
Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
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2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100 |