IXSN50N60U1 Search Results

Contextual Info: 4bflfc.E2b G G D 1 7 C11 3ÖT • IXY □IXYS IGBT with Diode IXSN50N60U1 I, CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V 2 ■ 4" é 'T n Symbol Test Conditions VcES T, = 25°C to 150°C 600 V Vo» Tj = 25°C to 150°C; R ^ = 1 MQ

IXSN50N60U1

Abstract: 25CC E72873 50N60 50N60U1
Contextual Info: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package