IXGX32N170AH1 Search Results

IXGX32N170AH1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGX32N170AH1		IXYS	Very High Voltage IGBT		Original	PDF

IXGX32N170AH1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGX32N170AH1 Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247	PDF

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IXGX32N170AH1

Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient

Original

32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247

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