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    IXYS Corporation IXGQ28N120BD1

    IGBT 1200V 50A 250W TO3P
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    IXGQ28N120BD1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGQ28N120BD1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 250W TO3P Original PDF

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    IXGQ28N120B

    Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1

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    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		PDF 28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1