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    IXYS Corporation IXGP30N60B4D1

    IGBT PT 600V 56A TO-220-3
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    IXGP30N60B4D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP30N60B4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 Original PDF

    IXGP30N60B4D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGP30N60B4D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat  tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


    Original     		IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP30N60B4D1 IC110 O-220 IF110 338B2 PDF

    IXGP30N60B4D1

    Abstract: 727 diode IF110 IXGP30N60B
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 727 diode IF110 IXGP30N60B PDF