IXGH40N30BD1 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGH40N30BD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH40N30BD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160	Original	PDF	IXGH40N30BD1 O-247 IXGH40N30BD1
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH40N30BD1 VCES IC25 VCE sat tfi = 300 V = 60 A = 2.4 V = 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient	Original	PDF	IXGH40N30BD1 O-247
IXGH40N30BD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT Symbol Test Conditions IXGH40N30BD1 Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C 40 A ICM TC = 25°C, 1 ms 160	Original	PDF	IXGH40N30BD1 O-247 IXGH40N30BD1
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
IXGH40N30 Abstract: high current igbt Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient	OCR Scan	PDF	IXGH40N30BD1 O-247 IXGH40N30 high current igbt
smd DIODE 3FS Abstract: IXGH40N30BD 40N30 Text: □ IXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20	OCR Scan	PDF	IXGH40N30BD1 IXGH40N30BD1S 13/10Nm/lb O-247 Cha55 smd DIODE 3FS IXGH40N30BD 40N30
40N30BD1 Abstract: No abstract text available Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o	OCR Scan	PDF	IXGH40N30BD1 IXGH40N30BD1S O-247SMD 40N30BD1S) O-247 360VTj 40N30BD1
ixgr32n60cd1 Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 Text: Discrete IGBTs with FRED Diode U r u G series C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0 TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1	OCR Scan	PDF	O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60