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    IXGH2N250 Search Results

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    IXGH2N250 Price and Stock

    IXYS Corporation IXGH2N250

    IGBT 2500V 5.5A 32W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH2N250 Tube 268 1
    • 1 $15.53
    • 10 $15.53
    • 100 $10.124
    • 1000 $15.53
    • 10000 $15.53
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    Mouser Electronics IXGH2N250 636
    • 1 $15.53
    • 10 $13.02
    • 100 $10.12
    • 1000 $9.61
    • 10000 $9.61
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    Future Electronics IXGH2N250 Tube 25 Weeks 30
    • 1 -
    • 10 -
    • 100 $11.27
    • 1000 $11.27
    • 10000 $11.27
    		Buy Now
    TTI IXGH2N250 Tube 300 30
    • 1 -
    • 10 -
    • 100 $13.34
    • 1000 $13.34
    • 10000 $13.34
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    TME IXGH2N250 279 1
    • 1 $14.77
    • 10 $11.75
    • 100 $10.92
    • 1000 $10.92
    • 10000 $10.92
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    Littelfuse Inc IXGH2N250

    Disc Igbt Npt-Very Hi Voltage To-247Ad/ Tube |Littelfuse IXGH2N250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXGH2N250 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.08
    • 10000 $10.08
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    IXGH2N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH2N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 5.5A 32W TO247 Original PDF

    IXGH2N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications VCES = 2500V IC110 = 2A VCE sat ≤ 3.1V IXGH2N250 IXGT2N250 TO-247 (IXGH) Symbol VCES Test Conditions Maximum Ratings TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGH2N250 IXGT2N250 O-247 2N250

    IXGH2N250

    Abstract: IXGT2N250 2N250
    Text: Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = 2500V IC110 = 2A VCE sat ≤ 3.1V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH2N250 IXGT2N250 IC110 O-247 2N250 IXGH2N250 IXGT2N250

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250