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    IXGH10N300 Search Results

    IXGH10N300 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH10N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 18A 100W TO247AD Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES


    Original     		PDF IXGH10N300 O-247 062in. 10N300

    IXGH10N300

    Abstract: 1200v 30A to247 20A400 ixys ixgh10n300
    Text: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES


    Original     		PDF IXGH10N300 O-247 062in. 10N300 IXGH10N300 1200v 30A to247 20A400 ixys ixgh10n300

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250