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    IXGF20N250 Search Results

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    IXGF20N250 Price and Stock

    IXYS Corporation IXGF20N250

    IGBT 2500V 23A ISOPLUS I4-PAC
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    DigiKey IXGF20N250 Tube 25
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    Mouser Electronics IXGF20N250
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    Littelfuse Inc IXGF20N250

    Discigbt Npt-Very Hi Voltage I4-Pak Iso+/Tube |Littelfuse IXGF20N250
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    Newark IXGF20N250 Bulk 300
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    IXGF20N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGF20N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 23A 100W I4-PAK Original PDF

    IXGF20N250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		IXGF20N250 20N250 7-12-A PDF

    IXGF20N250

    Abstract: 20N25
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		IXGF20N250 Ts140 20N250 4P-P528 2-04-09-A IXGF20N250 20N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGF20N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500


    Original     		IXGF20N250 50/60Hz, 20N250 4P-P528 2-04-09-A PDF

    IXGF20N250

    Abstract: No abstract text available
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGF20N250 VCES = 2500V = 23A IC25 VCE sat ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGF20N250 20N250 IXGF20N250 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 2500V IC25 = 23A VCE sat ≤ 3.1V IXGF20N250 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		IXGF20N250 20onds 20N250 7-12-A PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF