IXFN26N120P Search Results

IXFN26N120P Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFN26N120P MOSFET N-CH 1200V 23A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN26N120P	Tube			300	1 - 10 - 100 - 1000 $42.06163 10000 $42.06163	Buy Now
Newark	IXFN26N120P	Bulk			300	1 - 10 - 100 $44.08 1000 $44.08 10000 $44.08	Buy Now
RS	IXFN26N120P	Bulk		8 Weeks	10	1 - 10 $65.06 100 $65.06 1000 $65.06 10000 $65.06	Get Quote
IXYS Corporation IXFN26N120P Discrete Semiconductor Modules 26 Amps 1200V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN26N120P					1 - 10 - 100 - 1000 $44.18 10000 $44.18	Get Quote
Future Electronics	IXFN26N120P	Tube		26 Weeks	10	1 - 10 $49.29 100 $49.29 1000 $49.29 10000 $49.29	Buy Now
TTI	IXFN26N120P	Tube			300	1 - 10 - 100 - 1000 $42.07 10000 $42.07	Buy Now
TME	IXFN26N120P		7		1	1 $64.91 10 $51.49 100 $51.49 1000 $51.49 10000 $51.49	Buy Now
New Advantage Corporation	IXFN26N120P		15		1	1 - 10 $106.97 100 $99.83 1000 $99.83 10000 $99.83	Buy Now

IXFN26N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN26N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 23A SOT-227B		Original	PDF

IXFN26N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
26N120P Abstract: 26n120 IXFN26N120P Text: IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFN26N120P 300ns OT-227 E153432 26N120P 3-28-08-B 26n120 IXFN26N120P
Untitled Abstract: No abstract text available Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN26N120P = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXFN26N120P 300ns E153432 26N120P 10-24-11-C
Untitled Abstract: No abstract text available Text: IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	IXFN26N120P E153432 300ns 26N120P 10-24-11-C
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXFN26N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 460mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	PDF	IXFN26N120P 300ns OT-227 E153432 26N120P 1-07-A
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P