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    IXFN210N30P3 Search Results

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    IXFN210N30P3 Price and Stock

    IXYS Corporation IXFN210N30P3

    MOSFET Modules N-Channel: Power MOSFET w/Fast Diode
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    Mouser Electronics IXFN210N30P3 847
    • 1 $45.92
    • 10 $40.54
    • 100 $35.58
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    Future Electronics IXFN210N30P3 Tube 26 Weeks 10
    • 1 -
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    Bristol Electronics IXFN210N30P3 120
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    Quest Components IXFN210N30P3 96
    • 1 $57.488
    • 10 $57.488
    • 100 $45.9904
    • 1000 $45.9904
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    TTI IXFN210N30P3 Tube 300
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    TME IXFN210N30P3 1 1
    • 1 $41.77
    • 10 $38.01
    • 100 $35.83
    • 1000 $34.59
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    Chip 1 Exchange IXFN210N30P3 1,959
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    New Advantage Corporation IXFN210N30P3 1,207 1
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    • 100 $47.89
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    Vyrian IXFN210N30P3 219
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    Littelfuse Inc IXFN210N30P3

    Mosfet Module, 300V, 192A, 1.5Kw Rohs Compliant: Yes |Littelfuse IXFN210N30P3
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    Newark IXFN210N30P3 Bulk 216 1
    • 1 $45
    • 10 $39.73
    • 100 $34.87
    • 1000 $34.87
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    RS IXFN210N30P3 Bulk 8 Weeks 10
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    • 10 $49.66
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    IXFN210N30P3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN210N30P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 192A SOT-227 Original PDF

    IXFN210N30P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFN210N30P3

    Abstract: No abstract text available
    Text: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXFN210N30P3 250ns E153432 100ms 210N30P3 IXFN210N30P3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N30P3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFN210N30P3 250ns E153432 100ms 210N30P3 PDF

    IXFN210N30P3

    Abstract: E153432
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFN210N30P3 100ms 210N30P3 IXFN210N30P3 E153432 PDF