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    IXFK26N120 Search Results

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    IXFK26N120 Price and Stock

    IXYS Corporation IXFK26N120P

    MOSFETs 26 Amps 1200V
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    Mouser Electronics IXFK26N120P 61
    • 1 $38.31
    • 10 $37.42
    • 100 $25.75
    • 1000 $25.55
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    TTI IXFK26N120P Tube 300
    • 1 -
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    • 100 -
    • 1000 $24.31
    • 10000 $24.31
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    TME IXFK26N120P 1
    • 1 $36.83
    • 10 $29.24
    • 100 $27.29
    • 1000 $27.29
    • 10000 $27.29
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    Littelfuse Inc IXFK26N120P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK26N120P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFK26N120P Bulk 300
    • 1 -
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    • 1000 $25.75
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    RS IXFK26N120P Bulk 8 Weeks 25
    • 1 -
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    • 100 $38
    • 1000 $38
    • 10000 $38
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    IXFK26N120 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK26N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 26A TO-264 Original PDF

    IXFK26N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    26n120

    Abstract: ixfx26n120 ixfx26N120P 26N120P PLUS247 220ID 26N12
    Text: Preliminary Technical Information PolarTM Power MOSFET IXFK26N120P IXFX26N120P HiPerFETTM VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 26n120 ixfx26n120 ixfx26N120P PLUS247 220ID 26N12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFK26N120P IXFX26N120P = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 10-24-11-C PDF

    IXFX26N120P

    Abstract: PLUS247 26N120P ixfx26n120 IXFK26N120P ixfk26n120 2030g
    Text: PolarTM Power MOSFET HiPerFETTM IXFK26N120P IXFX26N120P VDSS ID25 = 1200V = 26A Ω ≤ 460mΩ ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P 300ns O-264 26N120P 3-28-08-B IXFX26N120P PLUS247 ixfx26n120 IXFK26N120P ixfk26n120 2030g PDF

    IXFK26N120P

    Abstract: IXFX26N120P
    Text: IXFK26N120P IXFX26N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = = 1200V 26A Ω 500mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    IXFK26N120P IXFX26N120P O-264 300ns PLUS247 26N120P 10-24-11-C IXFX26N120P PDF