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    IXFH50N20S Search Results

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    IXFH50N20S Price and Stock

    IXYS Corporation IXFH50N20SP

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IXFH50N20SP 5
    • 1 $36.6194
    • 10 $36.6194
    • 100 $36.6194
    • 1000 $36.6194
    • 10000 $36.6194
    		Buy Now
    IXFH50N20SP 3
    • 1 $30.5162
    • 10 $30.5162
    • 100 $30.5162
    • 1000 $30.5162
    • 10000 $30.5162
    		Buy Now

    IXFH50N20S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH50N20S IXYS HiperFET Power MOSFET Scan PDF

    IXFH50N20S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: s HiPerFET Power MOSFET IXFH50N20S VDSS ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr tr r = 200 V = 50 A = 45 mfì < 200 ns Preliminary data Sym bol Maximum R atings Test C onditions v DSS Tj = 25°C to 175°C


    OCR Scan     		D94010DE, PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH50N20S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)50# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)200 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ


    Original     		IXFH50N20S PDF

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan     		IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20 PDF