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    IXDR30N120 Search Results

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    IXDR30N120 Price and Stock

    IXYS Corporation IXDR30N120

    IGBT 1200V 50A 200W ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXDR30N120 Tube
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    IXYS Corporation IXDR30N120D1

    IGBT 1200V 50A 200W ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXDR30N120D1 Tube 300
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    • 1000 $7.26563
    • 10000 $7.26563
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    IXYS Integrated Circuits Division IXDR30N120

    IGBT DIS.SINGLE 30A 1200V NPT ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXDR30N120 17
    • 1 $8.55382
    • 10 $8.55382
    • 100 $7.7762
    • 1000 $7.7762
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    IXYS Integrated Circuits Division IXDR30N120D1

    IGBT DIS.DIODE SINGLE 30A 1200V XPT ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXDR30N120D1
    • 1 $11.93788
    • 10 $11.93788
    • 100 $11.1569
    • 1000 $11.1569
    • 10000 $11.1569
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    IXDR30N120 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXDR30N120 IXYS TRANS IGBT CHIP N-CH 1200V 50A 3ISOPLUS 247 Original PDF
    IXDR30N120 IXYS 1200V high voltage IGBT with optional diode Original PDF
    IXDR30N120D1 IXYS TRANS IGBT CHIP N-CH 1200V 50A 3ISOPLUS 247 Original PDF
    IXDR30N120D1 IXYS 1200V high voltage IGBT with optional diode Original PDF

    IXDR30N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


    Original     		PDF 30N120 30N120 247TM E153432 IXDR30N120

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IXDR30N120

    Abstract: 30N120 5027A R30N120 30n120d1 MJ10
    Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


    Original     		PDF 30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10

    IXDR30N120

    Abstract: 30N120 50 a diode 600v high R30N120
    Text: IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE sat typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside*


    Original     		PDF 30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 50 a diode 600v high R30N120

    35N60

    Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
    Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220


    Original     		PDF O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n

    diode 439

    Abstract: 30N120 IXDR30N120 R30N120
    Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol


    Original     		PDF 30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120