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    IXBT42N170A Price and Stock

    IXYS Corporation IXBT42N170A

    IGBT 1700V 42A TO268AA
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    DigiKey IXBT42N170A Tube 300
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    Future Electronics IXBT42N170A Tube 26 Weeks 30
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    TTI IXBT42N170A Tube 300
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    TME IXBT42N170A 1
    • 1 $29
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    New Advantage Corporation IXBT42N170A 14 1
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    Littelfuse Inc IXBT42N170A

    Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT42N170A
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    Newark IXBT42N170A Bulk 300
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    RS IXBT42N170A Bulk 8 Weeks 30
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    IXBT42N170A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBT 42N170A IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBT42N170A IXYS Discrete IGBTs Original PDF
    IXBT42N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 42A 357W TO268 Original PDF

    IXBT42N170A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE sat ≤ tfi = 1700V 21A 6.0V 20ns TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBT42N170A IXBH42N170A O-268 O-247 42N170A