ITT 5.1 DIODE Search Results

M091-9PSP

Abstract: DP-42-1
Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25-5.1 GHz GENERAL INFORMATION ITT CANNON V “ M091-9PSP \ OR ËQUIV. KDI/Triangle's sw itched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

8085 microprocessor serial communication

Abstract: LTE Receiver ic 8155 block diagram optocoupler ITT 900 ScansU9X21 ITT900
Contextual Info: STSOO-Series CONTROL SYSTEM Part 5.1 « TECHNICAL HANDBOOK Manual B27000 1100 51 SEPTEMBER 1986 S t a n d a f d B a d Ì ° & T e le ,° n A B ITT 900/5.1 CO NTRO L SYSTEM T able of Contents page 1. A rchite cture 1 2. Serial Data Communication 2 3. System Perform ance

1N4647

Abstract: 1N4655 1N4650 1N4648 1N4653 1N4677 1N4670 1N4675 1N4652 1N4656
Contextual Info: Zener Voltage Zener Type No. Volts 3t ItT | @ mA M ax. Zener Impedance @ I zt Ohms 39.0 43.0 47.0 3.2 3.0 2.7 80.0 93.0 105.0 1N4649na' 1N4650'191 1N4651n9 3.3 3.6 3.9 76.0 69.0 64.0 10.0 10.0 9 .0 1N4652'191 1N4653 ,9‘ 1N4654'19' 4.3 4.7 5.1 58.0 53.0

Z3B240CF

Abstract: ITT Semiconductors Z3B82 Z3B43CF 5115A 5958X Z3B33BF Z3B36BF Z3B39BF Z3B43BF
Contextual Info: Semiconductors ITT Zeiver Diodes Zener Diodes—1.5 W att Z3B series Metal Package- Wire Ended 10% T olerance (Z 3B . . . BF Range) MAXIMUM RATINGS V F(m ax)=1.2 V (at If =1-3A) lF(max)=1.3A These devices have an all-welded encapsulation with glass-metal hermetic seals.

Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

digital phase shifters

Abstract: cannon power supply DP-21 DP-32 DP-33 DP-36 DP-41 DP-42 DP-44 DP-51
Contextual Info: DIGITAL DIODE PHASE SHIFTERS SERIES DP 0.25–5.1 GHz GENERAL INFORMATION SMA FEMALE TYP. ITT CANNON MDB1-9PSP OR EQUIV. KDI/Triangle’s switched line digital phase shifters are controllable by binary logic. If a 360° phase shifter having sixteen discrete steps is

1n4743

Abstract: 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N4764 ZM4729 ZM4764
Contextual Info: ITT S Ef l I CO ND / INTERHETALL 5DE ]> 4bf l2 711 ODDERE? bOT M I S I 1N4729 . 1N4764 Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is ± 1 0% . Add suffix “A ” for ± 5 % tolerance. Other tolerances available

1N5241S

Contextual Info: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl m i S I 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S

Zener ITT

Abstract: 1N746 1N759 ZMM746 ZMM747 ZMM748 ZMM749 ZMM750 ZMM751 ZMM759
Contextual Info: ITT SEMICOND/ INTERMETALL Mbê2711 DDOEbTH S71 5DE D USI ZMM746 . . ZMM759 Silicon Planar Zener Diodes in MiniMELF case especially suited for automatic insertion. Standard Zener voltage tolerance is ± 10%. Add sulfix “ A” for ± 5 % tolerance. Other tolerances, non standard and higher

hall effect transistor 502a

Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Contextual Info: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera­ ture behavior of the magnetic switching points, and the mode of switching.

ZMM5257

Abstract: 1N5225 1N5262 ZMM5225 ZMM5226 ZMM5227 ZMM5228 ZMM5229 ZMM5262 Zener intermetall
Contextual Info: IT T SEmcOND/ INTERM ETALL b lE D • M bfiE711 Q003217 231 * I S I ZMM5225 . . . ZMM5262 Silicon Planar Zener Diodes Standard Zener voltage tolerance is ± 2 0 %. Add suffix “A" for ± 1 0 % tolerance and suffix “B” for ± 5 % tolerance. Other tolerances, non standard and higher Zener voltages

ITT ZENER

Abstract: 1N4729 1N4764 ZM4729 ZM4730 ZM4731 ZM4732 ZM4764 170DK Zener intermetall
Contextual Info: I T T SEflICONP/ INTERNETALL blE D • 4bfl2711 0003 20 b 4Tb « I S I ZM4729 . . . ZM4764 Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. Standard Zener voltage tolerance is ± 1 0 % . Add suffix “A ” for ± 5 % tolerance. Other tolerances available

MA152

Abstract: 1n5234 itt
Contextual Info: I T T CORP/ I T T CMPNTS 41E D • 4bfl2bfl4 QDG14DS T ■ ITO TM H I ZENER DIODES 1 N5225 Series 500 mW Glass Zener Diodes in DO-35 Package T. = 25°C I tM?4»onri lN$$ySsrte»{$60 Ndf»).] Using the type designations ZMM5225, ZMM5226 and soon, these Zener diodes are available in the MiniMELF package with the same

Zener diode 18 ITT

Abstract: Zener diode itt
Contextual Info: I T T CORP/ I T T CM P N T S M1E D • 4t.fi2bôH D Ü G 1 4 0 7 3 «ITÔ ZENER DIODES -r-u -u *. ZMM Series 500 mW Glass Zener Diodes in MlniMELF Package TA = 25 °C

Contextual Info: I T T CORP/ I T T CMPNTS 41E D • t b 8 S h 8 4 QOOlMCIi S ■ ITO ZENER DIODES "T-u-O 1N4729 Series 1 W att Glass Zener Diodes in DO-41 Package TA = 25 °C Using the type designations ZM 4729, Z M 4730 and so on, these Zener diodes are available in the MELF package with the same electrical charac­

Z3B240CF

Abstract: 5973A Z3B ITT Z3B120CF ITT Semiconductors 5S74X Zener ITT 5958X 5968B Z3B36CF
Contextual Info: ITT Sem iconductors Zener Diodes Zener D iod e s— 1.5 W att Z3B series Metal P a ck ag e. Wire Ended. 5% Toleran ce (Z3B . . . CF Range) These devices have an all-welded encapsulation with glass-metal hermetic seals. Available in standard preferred values from 3.3V to 100V with ±5% voltage tolerances.

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

BAV45A

Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
Contextual Info: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■

Z3B33BF

Abstract: Z3B36BF Z3B39BF Z3B43BF Z3B47BF Z3B51BF
Contextual Info: ITT Semiconductors Zeiver Diodes Zener Diodes— 1.5 Watt Z3B series Metal Package- W ire Ended 10%Toleran ce (Z 3 B . . . B F Range) M A X IM U M R A T IN G S V F (m ax)=1.2 V (at I f =1-3A) l F (m ax)=1.3A T hese devices have an all-welded en capsulation with glass-m etal herm etic seals.

BZY83

Abstract: bzy85 BZY85C BZY85C20 BZY85C18 BZY85-C12 BZY85C22 BZY83C10 BZY83C20 BZY85C6V8
Contextual Info: AMERICAN POWER DEVICES 23E D • 0737135 OODOOOfl 4 ■ ZENER DIODES LZ. . —— .X ITT DO-35 Case r 250mW Typet - o ? DO-35 Case Nominal Zener Voltage Vz @ Izi V Test Current Izr mA Maximum^ Dynamic Impedance Zzr @ Izi O 8 6 7 10 Typtcal Temperature Coefficlent

KSF30A20B

Abstract: O200
Contextual Info: FAST RECOVERY DIODE 30A/200V/trr:50nsec KSF30A20B FEATURES 5.31.209 4,7 .1«5> O S im ilar to TO-247AC C ase i in ^ 15.9(.626) _ J< i 3.5(.2q8) o U ltra -F a s t R ecovery 3.6 U 4 2 ) r^-W-602)-" \T4U34>l S.7(.224)f I 20.3C.8tHl) O L ow F o rw a rd V o ltag e D rop

1N5225S

Abstract: 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S
Contextual Info: ZENER DIODES ITT SEMICOND/ INTERMETALL SDE D • 4bfl2711 ÜÜDES13 HTl miSI 1N5225S Series 300 mW Zener Diodes DO-34 Glass Package TA = 25 °C Type 1N5225S 1N5226S 1N5227S 1N5228S 1N5229S 1N5230S 1N5231S 1N5232S 1N5233S 1N5234S 1N5235S 1N5236S 1N5237S 1N5238S

IN4158

Abstract: Z483 Z063 Z0S14 Z4B9.1 zener diode Z483 D029 IN3051 in4728 Z4830
Contextual Info: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 S E R I E S Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books