ITR03572 Search Results

2SC3649

Abstract: 2SA1419
Contextual Info: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SC3649

Abstract: ITR03571 ITR03572 2SA1419
Contextual Info: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.

2SC3649

Abstract: 2SA1419 ITR03571 2SA141
Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity