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    Untitled

    Abstract: No abstract text available
    Text: JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1200V IC(CONT) 100A VCE(sat) 2.8V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.


    Original
    PDF IT14410012D DS4372-2 ITC14410012D

    A1413

    Abstract: A-1413 A1413-4 2SK4192 A1413-5 K4192 2SK4192LS A14134 2SK41 A1413-1
    Text: 2SK4192LS 注文コード No. N A 1 4 1 3 三洋半導体データシート N 2SK4192LS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗低入力容量、超高速スイッチング。


    Original
    PDF 2SK4192LS K4192 IT14410 PW10s IT14411 IT14412 IT14413 IT10478 A1413-4/5 A1413 A-1413 A1413-4 2SK4192 A1413-5 K4192 2SK4192LS A14134 2SK41 A1413-1

    a1413

    Abstract: transistor a1413 2SK4192 A1413-5 A1413-4
    Text: 2SK4192LS Ordering number : ENA1413 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4192LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


    Original
    PDF 2SK4192LS ENA1413 A1413-5/5 a1413 transistor a1413 2SK4192 A1413-5 A1413-4

    Untitled

    Abstract: No abstract text available
    Text: DS4372-2.6 ITC14410012D POWERLINE N-CHANNELIGBT CHIP FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability 10(xs TYPICAL KEY PARAMETERS (25 C)


    OCR Scan
    PDF DS4372-2 ITC14410012D