Untitled
Abstract: No abstract text available
Text: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC
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Original
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3LN04CH
ENA1193
900mm2â
3LN04CH/D
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PDF
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3LN04MH
Abstract: sy 360 diode
Text: 3LN04MH Ordering number : ENA0550 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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Original
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3LN04MH
ENA0550
900mm2
A0550-4/4
3LN04MH
sy 360 diode
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PDF
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A1193
Abstract: 3ln04ch marking la IT1171
Text: 3LN04CH Ordering number : ENA1193 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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Original
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3LN04CH
ENA1193
PW10s,
900mm20
A1193-4/4
A1193
3ln04ch
marking la
IT1171
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PDF
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Untitled
Abstract: No abstract text available
Text: SCH2408 Ordering number : ENA1198 N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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SCH2408
ENA1198
900mm2â
SCH2408/D
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PDF
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a1194
Abstract: MOSFET IGSS 100A 3LN04S
Text: 3LN04S Ordering number : ENA1194 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04S General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage
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Original
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3LN04S
ENA1194
PW10s,
145mm80mm1
A1194-4/4
a1194
MOSFET IGSS 100A
3LN04S
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PDF
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A1196
Abstract: 3LN04SS 3ln04
Text: 3LN04SS Ordering number : ENA1196 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 3LN04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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Original
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3LN04SS
ENA1196
PW10s,
145mm80mm1
A1196-4/4
A1196
3LN04SS
3ln04
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PDF
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A1195
Abstract: No abstract text available
Text: MCH6650 注文コード No. N A 1 1 9 5 三洋半導体データシート N MCH6650 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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Original
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MCH6650
900mm2
200mA
200mA,
100mA,
IT11717
900mm2
IT13627
A1195
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PDF
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a1198
Abstract: 7028 NS A1198
Text: SCH2408 Ordering number : ENA1198 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2408 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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Original
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SCH2408
ENA1198
PW10s,
900mm20
A1198-4/4
a1198
7028
NS A1198
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PDF
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mosfet xb
Abstract: No abstract text available
Text: MCH6650 Ordering number : ENA1195 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6650 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
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Original
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MCH6650
ENA1195
PW10s,
900mm20
A1195-4/4
mosfet xb
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PDF
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A1198
Abstract: IT1171 NS A1198 IT11710
Text: SCH2408 注文コード No. N A 1 1 9 8 三洋半導体データシート N SCH2408 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。
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Original
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SCH2408
900mm2
200mA
200mA,
100mA,
IT11717
PW10s
900mm2
IT13629
A1198
IT1171
NS A1198
IT11710
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PDF
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LT1170 equivalent
Abstract: LT1170 boost converter 12v dc TS02N LTI170 regulator 4433 LT1171 buck LT1172CN8 JRM Resistor 100k LT1172 boost converter 60v LT1172A
Text: / T 'L i n f i A ß _ LT1170/LT1171 /LT1172 TECHNOLOGY ] 00kHz, 5A, 2.5A a n d 1.25A High Efficiency S w itch ing R egulators F6OTUft€S D C S C M P T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1170/LT1171/LT1172 are monolithic high power
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OCR Scan
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LT1170/LT1171
/LT1172
00kHz,
LT1171
50jjA
LT1172
551fl4bfl
MBR330p
LT1170 equivalent
LT1170 boost converter 12v dc
TS02N
LTI170
regulator 4433
LT1171 buck
LT1172CN8
JRM Resistor 100k
LT1172 boost converter 60v
LT1172A
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PDF
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Untitled
Abstract: No abstract text available
Text: EC4409C Ordering number : ENA1197 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4409C General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C
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Original
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EC4409C
ENA1197
PW10s,
145mm80mm1
A1197-4/4
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PDF
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A1196
Abstract: IT1171 3LN04SS IT11710
Text: 3LN04SS 注文コード No. N A 1 1 9 6 三洋半導体データシート N 3LN04SS N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・ハロゲンフリー対応。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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Original
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3LN04SS
145mm
200mA
200mA,
100mA,
IT11716
350mA
145mm
A1196
IT1171
3LN04SS
IT11710
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PDF
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