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    TE Connectivity VERSAFIT-1-1-2-4-SP

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    TE Connectivity VERSAFIT-1-1/2-4-SP

    Heat Shrink Tubing & Sleeves HS-TBG 1.57 YW PRICE PER METER
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    IT1124 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SBR100-16JS

    Abstract: No abstract text available
    Text: SBR100-16JS Ordering number : ENA0456 SANYO Semiconductors DATA SHEET SBR100-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features


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    SBR100-16JS ENA0456 A0456-3/3 SBR100-16JS PDF

    Untitled

    Abstract: No abstract text available
    Text: SBE808 Ordering number : ENA0451A SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise Low leakage current and high reliability due to planar structure


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    SBE808 ENA0451A A0451-6/6 PDF

    a04433

    Abstract: A04431
    Text: CPH6434 Ordering number : ENA0443 N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings


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    ENA0443 CPH6434 900mm2 A0443-4/4 a04433 A04431 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR100-16JS Ordering number : ENA0456 SANYO Semiconductors DATA SHEET SBR100-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features


    Original
    SBR100-16JS ENA0456 A0456-3/3 PDF

    SBE808

    Abstract: a0451
    Text: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.


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    SBE808 ENA0451 A0451-3/3 SBE808 a0451 PDF

    82306

    Abstract: marking KL MCH6412
    Text: MCH6412 Ordering number : ENA0448 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH6412 ENA0448 900mm2 A0448-4/4 82306 marking KL MCH6412 PDF

    A0448

    Abstract: 4157M MCH6412 IT11184
    Text: MCH6412 注文コード No. N A 0 4 4 8 三洋半導体データシート N MCH6412 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    MCH6412 900mm2 900mm2 IT11231 IT111232 A0448-3/4 A0448-4/4 A0448 4157M MCH6412 IT11184 PDF

    SBR100-16JS

    Abstract: No abstract text available
    Text: SBR100-16JS 注文コード No. N A 0 4 5 6 三洋半導体データシート N SBR100-16JS ショットキバリアダイオード ツインタイプ・カソードコモン 160V, 10A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


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    SBR100-16JS 62797GI BX-0698 91306SD TC-00000158 A0456-1/3 100kHz IT11250 SBR100-16JS PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0451B SBE808 Schottky Barrier Diode http://onsemi.com 15V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, choppers Features • Small switching noise • Halogen free compliance • Low leakage current and high reliability due to planar structure


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    ENA0451B SBE808 A0451-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6412 Ordering number : ENA0448 N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage


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    ENA0448 MCH6412 900mm2 A0448-4/4 PDF

    a04433

    Abstract: 82306 A0443 CPH6434
    Text: CPH6434 Ordering number : ENA0443 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


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    CPH6434 ENA0443 900mm2 A0443-4/4 a04433 82306 A0443 CPH6434 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0451A SBE808 Schottky Barrier Diode http://onsemi.com 15V, 1A, Low IR, Non-Monolithic Dual MCPH5 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise


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    ENA0451A SBE808 A0451-6/6 PDF

    marking se

    Abstract: No abstract text available
    Text: SBE808 Ordering number : ENA0451A SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise Low leakage current and high reliability due to planar structure


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    ENA0451A SBE808 A0451-6/6 marking se PDF

    Untitled

    Abstract: No abstract text available
    Text: ECH8622R Ordering number : EN8719 N-Channel Silicon MOSFET ECH8622R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.


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    EN8719 ECH8622R 900mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.


    Original
    ENA0451 SBE808 A0451-3/3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.


    Original
    SBE808 ENA0451 A0451-3/3 PDF

    Untitled

    Abstract: No abstract text available
    Text: um LT1124/LT1125 TECHNOLOGY D u a l/Q u a d Low Noise, High Speed Precision O p Am ps D C S C R IP T IO n F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain


    OCR Scan
    LT1124/LT1125 70jxV 112dB 116dB 16-Lead 109-I0 CA95035-7487 P0192 PDF

    LT1124

    Abstract: IT1124 0P270 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 DP270
    Text: urm LT1124/Lni25 TECHNOLOGY Dual/Q uad Low Noise, High Speed Precision Op Amps DCSCRIPTIOn F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain ■ Supply Current Per Amplifier


    OCR Scan
    LT1124/LT1125 112dB 116dB 500kHz LT1124-TAÃ 1/2LT1124 1/4LT1125) LT1124 IT1124 0P270 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 DP270 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1124/LITI25 u i m TECHNOLOGY D u a l/Q u a d Low Noise, High Speed Precision O p Am ps DCSCRIPTIOn F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain ■ Supply Current Per Amplifier


    OCR Scan
    LT1124/LITI25 112dB 116dB LT1124 LT1125 OP-27 OP-270/ OP-470 LT1124/LT1125 OP-27; PDF