IT1124 Search Results

SBR100-16JS

Contextual Info: SBR100-16JS Ordering number : ENA0456 SANYO Semiconductors DATA SHEET SBR100-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

Contextual Info: SBE808 Ordering number : ENA0451A SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise Low leakage current and high reliability due to planar structure

a04433

Abstract: A04431
Contextual Info: CPH6434 Ordering number : ENA0443 N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

Contextual Info: SBR100-16JS Ordering number : ENA0456 SANYO Semiconductors DATA SHEET SBR100-16JS Schottky Barrier Diode Twin Type • Cathode Common 160V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

SBE808

Abstract: a0451
Contextual Info: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.

82306

Abstract: marking KL MCH6412
Contextual Info: MCH6412 Ordering number : ENA0448 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

A0448

Abstract: 4157M MCH6412 IT11184
Contextual Info: MCH6412 注文コード No. N A 0 4 4 8 三洋半導体データシート N MCH6412 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

SBR100-16JS

Contextual Info: SBR100-16JS 注文コード No. N A 0 4 5 6 三洋半導体データシート N SBR100-16JS ショットキバリアダイオード ツインタイプ・カソードコモン 160V, 10A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

Contextual Info: um LT1124/LT1125 TECHNOLOGY D u a l/Q u a d Low Noise, High Speed Precision O p Am ps D C S C R IP T IO n F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain

Contextual Info: Ordering number : ENA0451B SBE808 Schottky Barrier Diode http://onsemi.com 15V, 1A, Low IR Applications • High frequency rectification switching regulators, converters, choppers Features • Small switching noise • Halogen free compliance • Low leakage current and high reliability due to planar structure

Contextual Info: MCH6412 Ordering number : ENA0448 N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

a04433

Abstract: 82306 A0443 CPH6434
Contextual Info: CPH6434 Ordering number : ENA0443 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6434 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: Ordering number : ENA0451A SBE808 Schottky Barrier Diode http://onsemi.com 15V, 1A, Low IR, Non-Monolithic Dual MCPH5 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise

LT1124

Abstract: IT1124 0P270 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 DP270
Contextual Info: urm LT1124/Lni25 TECHNOLOGY Dual/Q uad Low Noise, High Speed Precision Op Amps DCSCRIPTIOn F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain ■ Supply Current Per Amplifier

Contextual Info: LT1124/LITI25 u i m TECHNOLOGY D u a l/Q u a d Low Noise, High Speed Precision O p Am ps DCSCRIPTIOn F€flTUR€S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain ■ Supply Current Per Amplifier

Contextual Info: ECH8622R Ordering number : EN8719 N-Channel Silicon MOSFET ECH8622R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

82306

Abstract: sanyo WG WG SANYO ECH8622R marking wg
Contextual Info: ECH8622R Ordering number : EN8719 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8622R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

Contextual Info: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.

Contextual Info: SBE808 Ordering number : ENA0451 SANYO Semiconductors DATA SHEET SBE808 Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise. Low leakage current and high reliability due to planar structure.