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    power switching

    Abstract: ISO264 ISO264TM ID90
    Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20


    Original     		PDF 25N80C ISO264TM 728B1 065B1 123B1 power switching ISO264 ISO264TM ID90

    IXFG 55N50

    Abstract: ISO264 ISO264TM IXFK55N50 55N50
    Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		PDF 55N50 ISOPLUS247TM ISO264TM ISO264 IXFK55N50 728B1 123B1 728B1 065B1 IXFG 55N50 ISO264TM 55N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		PDF 55N50 ISOPLUS247TM ISO264 IXFK55N50 728B1 123B1 728B1 065B1