IS120A Search Results

IGBT 4000V ICM 400A

Abstract: IGBT 4000V
Contextual Info: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A

Contextual Info: Thyristors - SCR's. The plastic material carne« U/L recognition 94 V-O. Max. Repetitive Maximum RMS Peak Off - State On * State Current and Reverse atTc » 50 °C TYPE Voltage V drm & VRJtM It r m s (A) (V) Maximum Peak Surge On - State Current ( Note 1 )

is84 scr

Abstract: IS156 1S121 IS120A IS154 IS84 1s152 scr is100a
Contextual Info: Thyristors - SCR's. The plastic material came« U/L recognition 94 V-O. Max. Repetitive Maximum RMS Peak Off - State On * State Current and Reverse alT c » 50 °C TYPE Voilage It r m s Vdrm &. Vrkm (A) (V) Maximum Peak Surge On - State Current ( Note 1 )

Contextual Info: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A

AUPS4067D1

Abstract: AUIRGPS4067D1 aups4067 50E-6 AUIRGPS4067 AUIRGPS4067D 50E-7 TO-274A
Contextual Info: PD - 97726C AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features •         IC = 160A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 6 s SCSOA

IS154

Abstract: IS120 IS120A IS150A scr To 202
Contextual Info: E I C SEMICONDUCTOR INC bSE D • ^□□247'i ODOOOMfl 105 ■ EICS- Thyristors—SCR’s T h e p la stic m aterial c a r r ie s U /L recog nitio n 9 4 V -0 . T ype M ax. R epetitive P eak Off-State A n d R e v e rse V oltag e M ax. RM S O n-State C u rren t